Patents by Inventor Siao-Shan HUANG

Siao-Shan HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile static random access memory
    Patent number: 12224008
    Abstract: A non-volatile static random access memory includes: a static random access memory, a reading element and a first embedded non-volatile memory. The static random access memory includes a first inverter, a second inverter and two transistors, an output terminal of the first inverter and the input terminal of the second inverter are electrically connected to each other to serve as a Q node, an input terminal of the first inverter and an output terminal of the second inverter are electrically connected to each other to serve as a QB node, and the two transistors are electrically connected to the Q node and the QB node, respectively. The reading element is electrically connected to the Q node. The first embedded non-volatile memory is electrically connected to the QB node.
    Type: Grant
    Filed: December 22, 2022
    Date of Patent: February 11, 2025
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Darsen Duane Lu, Mohammed Aftab Baig, Siao-Shan Huang, Fu Yuan Chang
  • NON-VOLATILE STATIC RANDOM ACCESS MEMORY
    Publication number: 20240170062
    Abstract: A non-volatile static random access memory includes: a static random access memory, a reading element and a first embedded non-volatile memory. The static random access memory includes a first inverter, a second inverter and two transistors, an output terminal of the first inverter and the input terminal of the second inverter are electrically connected to each other to serve as a Q node, an input terminal of the first inverter and an output terminal of the second inverter are electrically connected to each other to serve as a QB node, and the two transistors are electrically connected to the Q node and the QB node, respectively. The reading element is electrically connected to the Q node. The first embedded non-volatile memory is electrically connected to the QB node.
    Type: Application
    Filed: December 22, 2022
    Publication date: May 23, 2024
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Darsen Duane LU, Mohammed Aftab BAIG, Siao-Shan HUANG, Fu Yuan CHANG