Patents by Inventor Siao-Shan Wang
Siao-Shan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230393467Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.Type: ApplicationFiled: August 8, 2023Publication date: December 7, 2023Inventors: Siao-Shan WANG, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 11387104Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.Type: GrantFiled: June 1, 2020Date of Patent: July 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Siao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20210341837Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.Type: ApplicationFiled: April 1, 2021Publication date: November 4, 2021Inventors: Siao-Shan WANG, Ching-Yu CHANG, Chin-Hsiang LIN
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Post development treatment method and material for shrinking critical dimension of photoresist layer
Patent number: 10915027Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.Type: GrantFiled: July 30, 2018Date of Patent: February 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Siao-Shan Wang, Ching-Yu Chang -
Patent number: 10866515Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.Type: GrantFiled: September 6, 2018Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Hui Weng, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin, Siao-Shan Wang
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Patent number: 10863630Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.Type: GrantFiled: December 20, 2019Date of Patent: December 8, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Siao-Shan Wang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20200335349Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.Type: ApplicationFiled: June 1, 2020Publication date: October 22, 2020Inventors: Siao-Shan Wang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang LIN
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Publication number: 20200294801Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Inventors: Siao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 10747114Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.Type: GrantFiled: August 23, 2019Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Siao-Shan Wang, Chen-Yu Liu, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 10672610Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The linking unit comprises an alkyl segment. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer.Type: GrantFiled: May 19, 2017Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Siao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 10672619Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.Type: GrantFiled: June 20, 2017Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Siao-Shan Wang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20200146154Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.Type: ApplicationFiled: December 20, 2019Publication date: May 7, 2020Inventors: Siao-Shan WANG, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN
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Patent number: 10517179Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.Type: GrantFiled: June 13, 2017Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Siao-Shan Wang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20190384177Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.Type: ApplicationFiled: August 23, 2019Publication date: December 19, 2019Inventors: Siao-Shan Wang, Chen-Yu Liu, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 10394123Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.Type: GrantFiled: May 17, 2017Date of Patent: August 27, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Siao-Shan Wang, Chen-Yu Liu, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20190157073Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.Type: ApplicationFiled: September 6, 2018Publication date: May 23, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hui WENG, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN, Siao-Shan WANG
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Publication number: 20180335697Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.Type: ApplicationFiled: May 17, 2017Publication date: November 22, 2018Inventors: Siao-Shan Wang, Chen-Yu Liu, Ching-Yu Chang, Chin-Hsiang Lin
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Publication number: 20180337044Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The linking unit comprises an alkyl segment. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer.Type: ApplicationFiled: May 19, 2017Publication date: November 22, 2018Inventors: Siao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
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Post Development Treatment Method and Material for Shrinking Critical Dimension of Photoresist Layer
Publication number: 20180335700Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.Type: ApplicationFiled: July 30, 2018Publication date: November 22, 2018Inventors: Siao-Shan Wang, Ching-Yu Chang -
Patent number: 10114291Abstract: A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.Type: GrantFiled: March 4, 2016Date of Patent: October 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ya-Ling Cheng, Ching-Yu Chang, Chien-Chih Chen, Chun-Kuang Chen, Siao-Shan Wang, Wei-Liang Lin