Abstract: A method for rasterizing a mask layout includes driving an image converter to obtain a raster image of the mask layout. The raster image is obtained by providing a pattern from the mask layout on a grid, obtaining grid points surrounding an edge of the pattern, constructing a path on the pattern which extends from the edge toward adjacent edges of the pattern, and allocating a raster value to each of the grid points. The raster value corresponds to an overlap area between a pixel, having a center located on one of the grid points, and the pattern having a boundary limited by the path.

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

Abstract: A method for rasterizing a mask layout includes driving an image converter to obtain a raster image of the mask layout. The raster image is obtained by providing a pattern from the mask layout on a grid, obtaining grid points surrounding an edge of the pattern, constructing a path on the pattern which extends from the edge toward adjacent edges of the pattern, and allocating a raster value to each of the grid points. The raster value corresponds to an overlap area between a pixel, having a center located on one of the grid points, and the pattern having a boundary limited by the path.

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

Abstract: A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.

Abstract: Inventive concepts provide a method of inspecting a semiconductor device including obtaining inspection image data of an inspection pattern of an inspection layer on a substrate. The method may include extracting inspection contour data including an inspection pattern contour from the inspection image data, and merging the inspection contour data with comparison contour data of a comparison layer to obtain merged data. The comparison layer may overlap the inspection layer. The method may also include determining a horizontal distance between the inspection pattern contour and a comparison pattern contour of the comparison contour data based on the merged data.

Abstract: A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

Abstract: Inventive concepts provide a method of inspecting a semiconductor device including obtaining inspection image data of an inspection pattern of an inspection layer on a substrate. The method may include extracting inspection contour data including an inspection pattern contour from the inspection image data, and merging the inspection contour data with comparison contour data of a comparison layer to obtain merged data. The comparison layer may overlap the inspection layer. The method may also include determining a horizontal distance between the inspection pattern contour and a comparison pattern contour of the comparison contour data based on the merged data.