Patents by Inventor Siddharth Chauhan

Siddharth Chauhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9946956
    Abstract: An image signal processor (ISP) processes received image frame data. In order to reduce power consumption caused by the processing of substantially similar image tiles of received image frames, differential processing may be used to determine which image tiles of a received image frame should be processed by the ISP, based upon a comparison between the received image tiles and previously received image tile data. In addition, differential processing may be automatically disabled in response to a determination that the image frames are too different from each other to realize any savings in processing resources or memory usage, and reenabled in response to a determination the received image frames are similar enough such that power savings can be realized through differential processing.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: April 17, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Siddharth Chauhan, Nishant Pandit, Hau Ling Hung
  • Publication number: 20170364772
    Abstract: An image signal processor (ISP) processes received image frame data. In order to reduce power consumption caused by the processing of substantially similar image tiles of received image frames, differential processing may be used to determine which image tiles of a received image frame should be processed by the ISP, based upon a comparison between the received image tiles and previously received image tile data. In addition, differential processing may be automatically disabled in response to a determination that the image frames are too different from each other to realize any savings in processing resources or memory usage, and reenabled in response to a determination the received image frames are similar enough such that power savings can be realized through differential processing.
    Type: Application
    Filed: June 15, 2016
    Publication date: December 21, 2017
    Inventors: Siddharth Chauhan, Nishant Pandit, Hau Ling Hung
  • Patent number: 8149384
    Abstract: A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: April 3, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Siddharth Chauhan, Kevin R. Lensing, James Broc Stirton
  • Patent number: 7925369
    Abstract: A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: April 12, 2011
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Siddharth Chauhan, Kevin R. Lensing, James Broc Stirton
  • Publication number: 20090157577
    Abstract: A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 18, 2009
    Inventors: SIDDHARTH CHAUHAN, Kevin R. Lensing, James Broc Stirton
  • Publication number: 20090153818
    Abstract: A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter.
    Type: Application
    Filed: December 17, 2007
    Publication date: June 18, 2009
    Inventors: Siddharth Chauhan, Kevin R. Lensing, James Broc Stirton