Abstract: A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.

Abstract: A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.

Abstract: A semiconductor device includes a low voltage region, a high voltage region monolithically integrated with the low voltage region in a semiconductor substrate, where the low voltage region is electrically coupled to the high voltage region through a capacitive isolation barrier, where the high voltage region is structurally isolated from the low voltage region by an isolation structure. The isolation structure includes a junction termination structure, a deep trench structure, or a reduced surface field (RESURF) structure. The isolation structure forms an isolation ring substantially enclosing the high voltage region in the semiconductor substrate. The low voltage region is configured to provide a differential signal to the high voltage region through the capacitive isolation barrier. The high voltage region is configured to receive a differential signal from the low voltage region through the capacitive isolation barrier so as to level shift the differential signal.

Abstract: A trench power semiconductor device including a recessed termination structure.

Abstract: A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.

Abstract: A trench power semiconductor device including a recessed termination structure.

Abstract: A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.