Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Abstract: A transistor suited for use as an RF switch includes a semiconductor layer and a stack of a gate insulator layer and a conductive gate layer. A length of the conductive gate layer is smaller on the side of a lower surface, located in the vicinity of the gate insulator layer, and is greater on the side of an upper surface, opposite to the lower surface. Lateral sides of the conductive gate layer are covered, on a lower portion, with a first material and, on an upper portion, with a second material. The first material has a Young's modulus greater than a Young's modulus of the second material.

Abstract: The present description concerns an integrated circuit chip including a semiconductor substrate and a radiofrequency component arranged inside and on top of an active region of the semiconductor substrate. The semiconductor substrate includes an amorphous buried layer in contact, by its upper surface, with a lower surface of the active region of the semiconductor substrate.

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.

Abstract: The present disclosure is directed to conductive structures that may be utilized in a radio-frequency (RF) switch. The embodiments of the conductive structures of the present disclosure are formed to balance the “on” resistance (Ron) and the “off” capacitance (Coff) such that the Ron·Coff value is optimized such that the conductive structures are relatively efficient as compared to conventional conductive structures within conventional RF switches. For example, the conductive structures include various metallization layers that are stacked on each other and spaced apart in a selected manner to balance the Ron and the Coff as to optimize the Ron·Coff figure of merit as a lower Ron·Coff is preferred.

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.