Abstract: The present invention relates to a pretreatment method to be applied to secondary surfaces in coating systems prior to coating. To this end, a non-stick coating is applied to the secondary surfaces, which can be easily detached from the secondary surfaces, even after coating material has been deposited thereon. In this way, the cleaning process of the coating system after the coating process is considerably simplified.

Abstract: The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

Abstract: The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target.

Abstract: The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

Abstract: The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.

Abstract: The present invention relates to a target for an ARC source having a first body (3) of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body (7) is provided, which is preferably in the form of a disk and is electrically isolated from the first body (3), in such a way that the second body (7) can essentially provide no electrons for maintaining a spark.

Abstract: The invention relates to a vacuum treatment chamber, comprising a coil arrangement for generating a magnetic field in the chamber, wherein the coil arrangement comprises at least one first coil section and a second coil section, wherein the first coil section and the second coil section are arranged adjacent to each other in cross-section and preferably in one plane, such that at least a partial section of the first coil substantially follows the course of a partial section of the second coil, wherein the spacing of the first partial section from the second partial section is at least one order of magnitude smaller than the cross-section of the optionally smaller coil section.

Abstract: The present invention relates to a vacuum chamber and to its production. According to the invention, the vacuum chamber comprises a frame into which insert plates are placed. The insert plates form together with the frame a closed space in which a vacuum can be created. Preferably, the shell of the frame is extracted from an integrally formed metal piece, with a large portion of material being removed, leading to openings for the insert plates to be created. This has among others the advantage that no welding seams are necessary where the individual plates are inserted.

Abstract: The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.

Abstract: The present invention relates to a pretreatment method to be applied to secondary surfaces in coating systems prior to coating. To this end, a non-stick coating is applied to the secondary surfaces, which can be easily detached from the secondary surfaces, even after coating material has been deposited thereon. In this way, the cleaning process of the coating system after the coating process is considerably simplified.

Abstract: The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.

Abstract: The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

Abstract: The present invention relates to a vacuum chamber and to its production. According to the invention, the vacuum chamber comprises a frame into which insert plates are placed. The insert plates form together with the frame a closed space in which a vacuum can be created. Preferably, the shell of the frame is extracted from an integrally formed metal piece, with a large portion of material being removed, leading to openings for the insert plates to be created. This has among others the advantage that no welding seams are necessary where the individual plates are inserted.

Abstract: The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: The invention relates to an arc source with a target (1) having a target front face (2) for the vacuum vaporization of the target material, a target backside with a cooling plate (4), a central target region (Z) as well as a target margin. The arc source further comprises a magnet configuration (8, 9) with an inner magnet system (8) and/or an outer magnet system (9) for the generation of a magnetic field in the proximity of the target front face. At least one of the magnet systems (8) is herein radially poled and effects alone or in connection with the particular other magnet system that the field lines of the magnetic field extend here substantially parallel to the target front face (2).

Abstract: Method for manufacturing magnetron sputter-coated workpieces includes placing a substrate adjacent a magnetron source having a target cathode, generating above the target cathode, at least one plasma loop by an electron trap established by generating a magnetic field which forms, in top view on the target cathode, a magnet field loop and, viewed in cross-section on the target cathode, a tunnel-shaped arc field and, an electric field which crosses the magnetic field of the magnet field loop. Plasma density distribution above the target cathode is controlled by interacting a control anode with the electron trap in a control segment area of the plasma loop. Magnetron sputter-coating the substrate by the magnetron sputter-source then takes place.

Abstract: Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode (5) and an anode arrangement (7). The anode arrangement (7) comprises on one hand an anode electrode (9) and on the other hand and electrically isolated therefrom a confinement (11). The confinement (11) has an opening (13) directed towards an area (S) of a substrate (21) to be cleaned. The electron source cathode (5) and the anode electrode (9) are electrically supplied by a supply circuit with a supply source (19). The circuit is operated electrically floating.