Patents by Inventor Siegfried L. Maurer
Siegfried L. Maurer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9916984Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: GrantFiled: April 10, 2017Date of Patent: March 13, 2018Assignee: International Business Machines CorporationInventors: Joel P. de Souza, Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Patent number: 9786756Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: GrantFiled: July 29, 2016Date of Patent: October 10, 2017Assignee: International Business Machines CorporationInventors: Joel P. de Souza, Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Publication number: 20170213736Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: JOEL P. de SOUZA, BAHMAN HEKMATSHOARTABARI, JEEHWAN KIM, SIEGFRIED L. MAURER, DEVENDRA K. SADANA
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Patent number: 9673290Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: GrantFiled: July 29, 2016Date of Patent: June 6, 2017Assignee: International Business Machines CorporationInventors: Joel P. de Souza, Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Patent number: 9620592Abstract: A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped III-V material. A contact interface layer is formed on the n-doped layer. The contact interface layer includes a II-VI material. A contact metal is formed on the contact interface layer to form an electronic device.Type: GrantFiled: February 12, 2015Date of Patent: April 11, 2017Assignee: International Business Machines CorporationInventors: Joel P. de Souza, Keith E. Fogel, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Publication number: 20160336424Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: ApplicationFiled: July 29, 2016Publication date: November 17, 2016Inventors: JOEL P. de SOUZA, BAHMAN HEKMATSHOARTABARI, JEEHWAN KIM, SIEGFRIED L. MAURER, DEVENDRA K. SADANA
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Publication number: 20160336418Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: ApplicationFiled: July 29, 2016Publication date: November 17, 2016Inventors: JOEL P. de SOUZA, BAHMAN HEKMATSHOARTABARI, JEEHWAN KIM, SIEGFRIED L. MAURER, DEVENDRA K. SADANA
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Publication number: 20160268395Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: ApplicationFiled: March 12, 2015Publication date: September 15, 2016Inventors: JOEL P. de SOUZA, BAHMAN HEKMATSHOARTABARI, JEEHWAN KIM, SIEGFRIED L. MAURER, DEVENDRA K. SADANA
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Patent number: 9443957Abstract: A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.Type: GrantFiled: March 12, 2015Date of Patent: September 13, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joel P. de Souza, Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Publication number: 20160240620Abstract: A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped III-V material. A contact interface layer is formed on the n-doped layer. The contact interface layer includes a II-VI material. A contact metal is formed on the contact interface layer to form an electronic device.Type: ApplicationFiled: February 12, 2015Publication date: August 18, 2016Inventors: Joel P. de Souza, Keith E. Fogel, Jeehwan Kim, Siegfried L. Maurer, Devendra K. Sadana
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Patent number: 9418692Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.Type: GrantFiled: October 9, 2014Date of Patent: August 16, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, NATIONAL UNIVERSITY OF SINGAPOREInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Publication number: 20150118521Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.Type: ApplicationFiled: October 9, 2014Publication date: April 30, 2015Inventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Patent number: 8900730Abstract: A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.Type: GrantFiled: January 31, 2012Date of Patent: December 2, 2014Assignee: International Business Machines CorporationInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Publication number: 20130320254Abstract: A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.Type: ApplicationFiled: January 31, 2012Publication date: December 5, 2013Applicants: National University of Singapore, International Business Machines CorporationInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Patent number: 8354694Abstract: A p-type field effect transistor (PFET) having a compressively stressed channel and an n-type field effect transistor (NFET) having a tensilely stressed channel are formed. In one embodiment, a silicon-germanium alloy is employed as a device layer, and the source and drain regions of the PFET are formed employing embedded germanium-containing regions, and source and drain regions of the NFET are formed employing embedded silicon-containing regions. In another embodiment, a germanium layer is employed as a device layer, and the source and drain regions of the PFET are formed by implanting a Group IIIA element having an atomic radius greater than the atomic radius of germanium into portions of the germanium layer, and source and drain regions of the NFET are formed employing embedded silicon-germanium alloy regions. The compressive stress and the tensile stress enhance the mobility of charge carriers in the PFET and the NFET, respectively.Type: GrantFiled: August 13, 2010Date of Patent: January 15, 2013Assignee: International Business Machines CorporationInventors: Stephen W. Bedell, Jee H. Kim, Siegfried L. Maurer, Alexander Reznicek, Devendra K. Sadana
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Publication number: 20120037998Abstract: A p-type field effect transistor (PFET) having a compressively stressed channel and an n-type field effect transistor (NFET) having a tensilely stressed channel are formed. In one embodiment, a silicon-germanium alloy is employed as a device layer, and the source and drain regions of the PFET are formed employing embedded germanium-containing regions, and source and drain regions of the NFET are formed employing embedded silicon-containing regions. In another embodiment, a germanium layer is employed as a device layer, and the source and drain regions of the PFET are formed by implanting a Group IIIA element having an atomic radius greater than the atomic radius of germanium into portions of the germanium layer, and source and drain regions of the NFET are formed employing embedded silicon-germanium alloy regions. The compressive stress and the tensile stress enhance the mobility of charge carriers in the PFET and the NFET, respectively.Type: ApplicationFiled: August 13, 2010Publication date: February 16, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen W. Bedell, Jee H. Kim, Siegfried L. Maurer, Alexander Reznicek, Devendra K. Sadana
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Publication number: 20110241115Abstract: A Schottky field effect transistor (FET) includes a gate stack located on a silicon on insulator (SOI) layer, the gate stack comprising a gate silicide region; and source/drain silicide regions located in the SOI layer, the source/drain silicide regions comprising and at least one of sulfur and fluorine, wherein an interface comprising arsenic is located between each of the source/drain silicide regions and the SOI layer. A method of forming a contact, the contact comprising a silicide region adjacent to a silicon region, includes co-implanting the silicide region with arsenic and at least one of sulfur and fluorine; and drive-in annealing the co-implanted silicide region to diffuse the arsenic to an interface between the silicide region and the silicon region.Type: ApplicationFiled: April 5, 2010Publication date: October 6, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christian Lavoie, Siegfried L. Maurer, Qiqing Ouyang, Paul Solomon, Zhen Zhang
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Patent number: 7718231Abstract: A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.Type: GrantFiled: September 30, 2003Date of Patent: May 18, 2010Assignee: International Business Machines CorporationInventors: Kwang Su Choe, Keith E. Fogel, Siegfried L. Maurer, Ryan M. Mitchell, Devendra K. Sadana
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Publication number: 20040266129Abstract: Disclosed herein is a method of providing improved electrical isolation in a separation by ion implanted oxide (SIMOX) process of making an SOI wafer. The method includes implanting ions into a substrate in a base dose implant conducted at a first energy level, implanting ions into the substrate at a second energy level in a second implant while the substrate is held at room temperature, and annealing the substrate to cause the implanted ions to be redistributed throughout the buried oxide (BOX) layer of the SOI wafer.Type: ApplicationFiled: June 27, 2003Publication date: December 30, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joel P. DeSouza, Harold J. Hovel, Junedong Lee, Siegfried L. Maurer, Devendra K. Sadana, Dominic Schepis, Ghavam Shahidi, Neena Garg
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Publication number: 20020190318Abstract: A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.Type: ApplicationFiled: June 19, 2001Publication date: December 19, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen R. Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee, Siegfried L. Maurer, Maurice H. Norcott, Devendra K. Sadana