Abstract: A process for DRAM cell production includes (1) depositing a layer of a first substance in a trench; (2) depositing a first layer of a second substance in said trench; (3) growing an interfacial layer of oxide between said layer of said first substance and said first layer of said second substance, and between side walls of said trench and said first layer of said second substance; (4) applying an anisotropic etching substance to the surface of said first layer of said second substance, thereby exposing said interfacial layer of oxide; (5) applying a second etching substance to the surface of said first layer of said second substance thereby substantially removing said interfacial layer of oxide; and (6) depositing a second layer of said second substance in said trench. The process reduces the contact resistance of the buried strap and improves the production yield for low temperature performance cells.