Patents by Inventor Siegfried R. Mader

Siegfried R. Mader has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon integrated circuit region containing implanted arsenic and germanium
    Patent number: 4137103
    Abstract: A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 .times. 10.sup.-2 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5% smaller -- when high arsenic atom concentrations of at least 1 .times. 10.sup.-2 atoms/total atoms in the substrate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted, then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.
    Type: Grant
    Filed: May 22, 1978
    Date of Patent: January 30, 1979
    Assignee: International Business Machines Corporation
    Inventors: Siegfried R. Mader, Burton J. Masters, H. Bernhard Pogge
  • Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium
    Patent number: 4111719
    Abstract: A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 .times. 10.sup.-2 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5% smaller -- when high arsenic atom concentrations of at least 1 .times. 10.sup.-2 atoms/total atoms in the substrate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted, then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.
    Type: Grant
    Filed: December 6, 1976
    Date of Patent: September 5, 1978
    Assignee: International Business Machines Corporation
    Inventors: Siegfried R. Mader, Burton J. Masters, H. Bernhard Pogge