Abstract: Subject-matter of the invention is a method of applying silicon carbide-containing materials to a substrate surface, and an apparatus for carrying out the method.

Abstract: A method for making an article comprising silicon carbide. The method includes producing an article including silicon carbide via additive manufacturing. The method further includes heating via at least one laser beam in a site-selective and locally limited manner a surface of the article so as to cause at least one of ablation and chemical modification of the surface.

Abstract: The invention relates to a method for the production of a composition, in particular a SiC precursor granulate, for use in additive manufacturing from a solution or dispersion.

Abstract: The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ?1400° C. to ?2000° C., in particular in a range from ?1650° C. to ?1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.

Abstract: The present invention relates to a process for producing a silicon carbide-containing body (100), characterized in that the process has the following process steps: a) providing a mixture (16) comprising a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a solid granular material; b) arranging a layer of the mixture (16) provided in process step a) on a carrier (12), the layer of the mixture (16) having a predefined thickness; and c) treating the mixture (16) arranged in process step b) over a locally limited area with a temperature within a range from ?1400° C. to ?2000° C. according to a predetermined three-dimensional pattern, the predetermined three-dimensional pattern being selected on the basis of the three-dimensional configuration of the body (100) to be produced. Such a process allows simple and inexpensive production even of complex structures from silicon carbide.

Abstract: The invention relates to a photovoltaic device (1), comprising a photovoltaic acceptor material (7) and a photovoltaic donor material (10), in which the photovoltaic device (1) comprises at least two carrier layers (2, 3), of which one carrier layer (2) has n-doped electron donors (6) and the other carrier layer has acceptor material (7) as p-doped or undoped electron acceptors, wherein the carrier layers (2, 3) are arranged with respect to one another such that they touch one another at least in sections, and the carrier layers (2, 3) are wetted or coated in filmlike fashion with a photovoltaic donor material (10). The carrier layers (2, 3), which are formed in particular from fibres (6, 7) composed of silicon carbide SiC, enable textile solar cells. Methods for producing the fibres (6, 7) and for producing the photovoltaic device (1) and textile structures formed therefrom are furthermore described.

Abstract: The present invention relates to a method for producing a thin nitrogen-free layer of silicon carbide by means of a carbon- and silicon-containing solution or dispersion.

Abstract: The present invention relates to a method for producing a fibre-reinforced, transparent composite material (10), comprising the following steps: a) providing a material matrix melt and b) producing reinforcing fibres (14), step b) of the method comprising the steps of b1) providing a mixture having a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a granulated solid; b2) treating the mixture provided in step a) of the method at a temperature in a range from ?1400° C. to ?2000° C., more particularly in a range from ?1650° C. to ?1850° C.; thereby producing reinforcing fibres (14), the method comprising the further steps of c) introducing the reinforcing fibres (14) into the material melt; and d) optionally cooling the material melt to form a transparent composite material (10). A method of this kind allows a composite material to be produced that is able to unite high transparency with outstanding reinforcing qualities.

Abstract: The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.

Abstract: The present invention relates to a method for producing silicon carbide-containing fibers or silicon carbide-containing nano- and/or micro-structured foams, and to the use thereof, in particular as anode materials for lithium-ion storage batteries.

Abstract: The invention relates to a method for the production of a silicon carbide-containing structure, in particular by means of additive manufacturing, to a liquid composition for producing the silicon carbide-containing structure and to a device for carrying out the method.

Abstract: The invention relates to a method for producing three-dimensional objects, in particular workpieces, made from silicon-carbide containing compounds, in particular material, by means of additive manufacturing.

Abstract: The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fiber.

Abstract: The invention relates to a layered structure (1) of an apparatus that luminesces by means of organic luminescence, which consists of at least two layers (2, 3) of transparent, semiconductive fibers as a substrate and an electrode, as well as a layer (5) disposed between adjacent layers (2, 3), composed of a photoactive polymer, in which layer, in interaction with the adjacent layers (2, 3) of transparent, semiconductive fibers, an organic luminescence (7) can be brought about. Furthermore, methods for the production and for the operation of corresponding layered structures, and a luminescent apparatus formed from them, are indicated.

Abstract: The present invention relates to a process for producing a silicon carbide-containing body (100), characterized in that the process has the following process steps: a) providing a mixture (16) comprising a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a solid granular material; b) arranging a layer of the mixture (16) provided in process step a) on a carrier (12), the layer of the mixture (16) having a predefined thickness; and c) treating the mixture (16) arranged in process step b) over a locally limited area with a temperature within a range from ?1400° C. to ?2000° C. according to a predetermined three-dimensional pattern, the predetermined three-dimensional pattern being selected on the basis of the three-dimensional configuration of the body (100) to be produced. Such a process allows simple and inexpensive production even of complex structures from silicon carbide.

Abstract: The present invention relates to a method for producing a fibre-reinforced, transparent composite material (10), comprising the following steps: a) providing a material matrix melt and b) producing reinforcing fibres (14), step b) of the method comprising the steps of b1) providing a mixture having a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a granulated solid; b2) treating the mixture provided in step a) of the method at a temperature in a range from ?1400° C. to ?2000° C., more particularly in a range from ?1650° C. to ?1850° C.; thereby producing reinforcing fibres (14), the method comprising the further steps of c) introducing the reinforcing fibres (14) into the material melt; and d) optionally cooling the material melt to form a transparent composite material (10). A method of this kind allows a composite material to be produced that is able to unite high transparency with outstanding reinforcing qualities.

Abstract: The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre.

Abstract: The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ?1400° C. to ?2000° C., in particular in a range from ?1650° C. to ?1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.

Abstract: The invention relates to a layered structure (1) of an apparatus that luminesces by means of organic luminescence, which consists of at least two layers (2, 3) of transparent, semiconductive fibers as a substrate and an electrode, as well as a layer (5) disposed between adjacent layers (2, 3), composed of a photoactive polymer, in which layer, in interaction with the adjacent layers (2, 3) of transparent, semiconductive fibers, an organic luminescence (7) can be brought about. Furthermore, methods for the production and for the operation of corresponding layered structures, and a luminescent apparatus formed from them, are indicated.

Abstract: The invention relates to a method for production of an object with an at least partly silicon carbide structure from a blank of a carbon-containing material, wherein, in a first step, the object made from the carbon-containing material is produced essentially in the desired end form and/or end size, the object made from the carbon-containing material is then at least partly enveloped in a carbon-rich silicon dioxide granulate and then fired at least once in the envelope in a protective gas atmosphere such that the silicon dioxide granulate gives off gas containing silicon carbide which diffuses into the object and the carbon-containing material is completely or partly converted into silicon carbide.