Abstract: One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.

Abstract: One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.