Patents by Inventor Siew Lok Toh

Siew Lok Toh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact pressure sensor and method for manufacturing the same
    Patent number: 7127949
    Abstract: A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (26) sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure (8) that is formed on a first process support substrate (20) from the first process support substrate to a second contact pressure sensor support substrate (40).
    Type: Grant
    Filed: July 8, 2003
    Date of Patent: October 31, 2006
    Assignee: National University of Singapore
    Inventors: Ramam Akkipeddi, Christopher P Sperring, Siew Lok Toh, Cho Jui Tay, Mustafizur Rahman, Soo Jin Chua
  • Method to improve adhesion of dielectric films in damascene interconnects
    Patent number: 7078333
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: July 18, 2006
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Method to improve adhesion of dielectric films in damascene interconnects
    Patent number: 6797605
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Grant
    Filed: July 26, 2001
    Date of Patent: September 28, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Apparatus to quantify the adhesion of film
    Patent number: 6513374
    Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: February 4, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay
  • Method to improve adhesion of dielectric films in damascene interconnects
    Publication number: 20030022472
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Application
    Filed: July 26, 2001
    Publication date: January 30, 2003
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Apparatus to quantify the adhesion of film
    Publication number: 20020100334
    Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.
    Type: Application
    Filed: January 29, 2001
    Publication date: August 1, 2002
    Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay