Patents by Inventor Siew Neo
Siew Neo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220262640Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.Type: ApplicationFiled: May 5, 2022Publication date: August 18, 2022Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
-
Patent number: 11355345Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.Type: GrantFiled: December 21, 2019Date of Patent: June 7, 2022Assignee: Lam Research CorporationInventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
-
Patent number: 11225712Abstract: A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.Type: GrantFiled: February 25, 2019Date of Patent: January 18, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Joshua Collins, Siew Neo, Hanna Bamnolker, Kapil Umesh Sawlani
-
Publication number: 20200144066Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.Type: ApplicationFiled: December 21, 2019Publication date: May 7, 2020Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
-
Patent number: 10573522Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.Type: GrantFiled: August 9, 2017Date of Patent: February 25, 2020Assignee: Lam Research CorporationInventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
-
Publication number: 20190326168Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.Type: ApplicationFiled: June 28, 2019Publication date: October 24, 2019Inventors: Tsung-Han Yang, Anand Chandrashekar, Jasmine Lin, Deqi Wang, Gang Liu, Michal Danek, Siew Neo
-
Patent number: 10337087Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.Type: GrantFiled: January 19, 2018Date of Patent: July 2, 2019Assignee: ALTA DEVICES, INC.Inventors: Thomas Gmitter, Gang He, Melissa Archer, Siew Neo
-
Publication number: 20190185992Abstract: A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.Type: ApplicationFiled: February 25, 2019Publication date: June 20, 2019Inventors: Joshua Collins, Siew Neo, Hanna Bamnolker, Kapil Umesh Sawlani
-
Patent number: 10214807Abstract: A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WClx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.Type: GrantFiled: June 2, 2016Date of Patent: February 26, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Joshua Collins, Siew Neo, Hanna Bamnolker, Kapil Umesh Sawlani
-
Publication number: 20180209018Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Inventors: Thomas GMITTER, Gang HE, Melissa ARCHER, Siew NEO
-
Patent number: 9994936Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.Type: GrantFiled: August 15, 2011Date of Patent: June 12, 2018Assignee: Alta Devices, Inc.Inventors: Thomas Gmitter, Gang He, Melissa Archer, Siew Neo
-
Publication number: 20180155808Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.Type: ApplicationFiled: January 19, 2018Publication date: June 7, 2018Inventors: Thomas GMITTER, Gang HE, Melissa ARCHER, Siew NEO
-
Publication number: 20180053660Abstract: Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.Type: ApplicationFiled: August 9, 2017Publication date: February 22, 2018Inventors: Adam Jandl, Sema Ermez, Lawrence Schloss, Sanjay Gopinath, Michal Danek, Siew Neo, Joshua Collins, Hanna Bamnolker
-
Publication number: 20170365513Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.Type: ApplicationFiled: July 3, 2017Publication date: December 21, 2017Inventors: Tsung-Han Yang, Anand Chandrashekar, Jasmine Lin, Deqi Wang, Gang Liu, Michal Danek, Siew Neo
-
Publication number: 20170350008Abstract: A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WClx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.Type: ApplicationFiled: June 2, 2016Publication date: December 7, 2017Inventors: Joshua Collins, Siew Neo, Hanna Bamnolker, Kapil Umesh Sawlani
-
Publication number: 20130042801Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Inventors: Thomas Gmitter, Gang He, Melissa Archer, Siew Neo
-
Patent number: 8066552Abstract: A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.Type: GrantFiled: January 26, 2005Date of Patent: November 29, 2011Assignee: Applied Materials, Inc.Inventors: Alain Duboust, Shou-Sung Chang, Wei Lu, Siew Neo, Yan Wang, Antoine P. Manens, Yongsik Moon
-
Publication number: 20100267318Abstract: A polishing pad include a polishing layer having a polishing surface and a backing layer on a side of the polishing layer opposite the polishing surface. An outer edge of the polishing layer overhangs an outer edge of the backing layer.Type: ApplicationFiled: June 25, 2010Publication date: October 21, 2010Inventors: Alain Duboust, Shou-Sung Chang, Wei Lu, Siew Neo, Yan Wang, Antoine P. Manens, Yongsik Moon
-
Patent number: 7678245Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.Type: GrantFiled: June 30, 2004Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Yan Wang, Siew Neo, Feng Liu, Stan D. Tsai, Yongqi Hu, Alain Duboust, Antoine Manens, Ralph M. Wadensweiler, Rashid Mavliev, Liang-Yuh Chen, Donald J. K. Olgado, Paul D. Butterfield, Ming-Kuei Tseng, Shou-Sung Chang, Lizhong Sun
-
Patent number: 7384534Abstract: Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.Type: GrantFiled: March 7, 2005Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Lizhong Sun, Feng Q. Liu, Siew Neo, Stan Tsai, Liang-Yuh Chen