Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.

Abstract: A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (26) sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure (8) that is formed on a first process support substrate (20) from the first process support substrate to a second contact pressure sensor support substrate (40).