Patents by Inventor Siew Yong Kong

Siew Yong Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique
    Patent number: 6899857
    Abstract: A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface above which it is desired to form a region of low dielectric constant nanoporous material. Next, the present method recites subjecting the microemulsion, which has been applied to the surface, to a thermal process such that the region of low dielectric constant nanoporous material is formed above the surface.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: May 31, 2005
    Assignee: Chartered Semiconductors Manufactured Limited
    Inventors: Soo Choi Pheng, Lap Chan, Wang Cui Yang, Siew Yong Kong, Alex See
  • Method for forming a region of low dielectric constant nanoporous material
    Patent number: 6602801
    Abstract: A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of combining a plurality of materials to form a solution. In the present embodiment, the plurality of materials comprising a low dielectric constant material, a pore generator material, and a solvent. In this embodiment, the present method then applies the solution to a surface above which it is desired to form the region of low dielectric constant nanoporous material. Next, the present embodiment subjects the solution, which has been applied to the surface, to a thermal process such that a region of low dielectric constant nanoporous material is formed above the surface.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: August 5, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Siew Yong Kong, Alex See, Simon Chooi, Gautam Sarkar
  • METHOD FOR FORMING A REGION OF LOW DIELECTRIC CONSTANT NANOPOROUS MATERIAL
    Publication number: 20030092240
    Abstract: A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of combining a plurality of materials to form a solution. In the present embodiment, the plurality of materials comprising a low dielectric constant material, a pore generator material, and a solvent. In this embodiment, the present method then applies the solution to a surface above which it is desired to form the region of low dielectric constant nanoporous material. Next, the present embodiment subjects the solution, which has been applied to the surface, to a thermal process such that a region of low dielectric constant nanoporous material is formed above the surface.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 15, 2003
    Applicant: CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
    Inventors: Siew Yong Kong, Alex See, Simon Chooi, Gautam Sarkar
  • Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique
    Publication number: 20030092251
    Abstract: A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface above which it is desired to form a region of low dielectric constant nanoporous material. Next, the present method recites subjecting the microemulsion, which has been applied to the surface, to a thermal process such that the region of low dielectric constant nanoporous material is formed above the surface.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 15, 2003
    Applicant: CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
    Inventors: Soo Choi Pheng, Lap Chan, Wang Cui Yang, Siew Yong Kong, Alex See