Patents by Inventor SiGe Semiconductor Inc.

SiGe Semiconductor Inc. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130188529
    Abstract: A transceiver circuit is configured to operate in a first mode of operation and a second mode of operation such that a receive signal propagates from an antenna through a first filter to a low noise amplifier while simultaneously a transmit signal propagates from a power amplifier through a second filter to the antenna when operating in the first mode. The receive signal propagates from the antenna to the low noise amplifier without being filtered while alternating with the transmit signal propagating from the power amplifier to the antenna without being filtered when operating in the second mode.
    Type: Application
    Filed: March 8, 2013
    Publication date: July 25, 2013
    Applicant: SIGE SEMICONDUCTOR, INC.
    Inventor: SiGe Semiconductor, Inc.
  • Publication number: 20130181779
    Abstract: A system and method improve amplifier efficiency of operation relative to that of an amplifying transistor with a fixed bias current. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The amplifying transistor is biased with a bias current that is determined based at least in part on the power level and the indication where the bias current is different for channels at an edge of a channel band than for channels nearer a center of the channel band.
    Type: Application
    Filed: February 27, 2013
    Publication date: July 18, 2013
    Applicant: SIGE SEMICONDUCTOR, INC.
    Inventor: SiGe Semiconductor, Inc.
  • Publication number: 20130099845
    Abstract: A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.
    Type: Application
    Filed: December 10, 2012
    Publication date: April 25, 2013
    Applicant: SIGE SEMICONDUCTOR INC.
    Inventor: SiGe Semiconductor Inc.