Abstract: A method of making a junction field effect transistor includes sequentially growing a first conductivity type semiconductor layer and a relatively high resistivity semiconductor layer on a relatively high resistivity semiconductor substrate; forming spaced apart relatively low resistivity first conductivity type source and drain regions in the relatively high resistivity and first conductivity type semiconductor layers; forming a second conductivity type gate region in the high resistivity semiconductor layer spaced from the source and drain regions and extending to and forming a rectifying junction with the first conductivity type semiconductor layer; and forming source, gate, and drain electrodes in contact with the source, gate, and drain regions, respectively.

Abstract: A junction field effect transistor includes a semiconductor body having a surface, relatively heavily doped source and drain regions of a first conductivity type disposed in the semiconductor body spaced from each other and reaching the surface, a channel layer of the first conductivity type disposed within the semiconductor body extending between and electrically connecting the source and drain regions, a gate region of a second conductivity type disposed within the semiconductor body extending from the surface to the channel layer and forming a rectifying junction with the channel layer, a relatively high resistivity region disposed within the semiconductor body between the surface and the channel layer, extending between the source and drain regions and surrounding the gate region, and source, gate, and drain electrodes disposed on the surface in contact with the source, gate, and drain regions, respectively.