Patents by Inventor Sigeyuki Ueda

Sigeyuki Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing SOI substrate and semiconductor device using the same
    Patent number: 5525536
    Abstract: A SOI substrate has a first insulating film formed on a semiconductor substrate. A first opening is formed thereon and a dummy layer is formed on the first opening and the first insulating film. A second opening is formed in the dummy layer and a second insulating film is formed and the dummy layer is removed by etching through the third opening to form a cavity. A semiconductor crystal layer is epitaxially grown within the cavity with use of the semiconductor substrate as a seed. The second insulating film is then removed from the semiconductor crystal layer.
    Type: Grant
    Filed: April 13, 1994
    Date of Patent: June 11, 1996
    Assignee: Rohm Co., Ltd.
    Inventor: Sigeyuki Ueda