Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: Device for the floating accommodation of a wafer. This device comprises two mutually opposite parts which delimit a chamber in which the wafer is placed. By gas being supplied from opposite sides, the wafer is held in a floating position. To prevent the wafer from touching the lateral boundaries, it is proposed to provide a discharge of gas at least partially near the circumference of the chamber wherein the wafer is accommodated. This discharge is realised such that if the wafer moves from the intended position to such a gas discharge, by closing of said gas discharge, the pressure is locally increased such that a force is generated acting in opposite direction to return the wafer in the intended position.