Abstract: A storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS transistor is connected to a first read line, and a drain of the first MOS transistor is connected to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line; or in a second state, the second read line is a read word line, and the first read line is a read bit line.

Abstract: A storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS transistor is connected to a first read line, and a drain of the first MOS transistor is connected to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line; or in a second state, the second read line is a read word line, and the first read line is a read bit line.

Abstract: A storage unit and a static random access memory (SRAM), where storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first metal-oxide-semiconductor (MOS) transistor. A gate of the first MOS transistor is coupled to the first storage bit, a source of the first MOS transistor is coupled to a first read line, and a drain of the first MOS transistor is coupled to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line, or in a second state, the second read line is a read word line, and the first read line is a read bit line. The storage unit according to embodiments of the present invention can implement an exchange between a read word line and a read bit line.

Abstract: A storage unit and a static random access memory (SRAM), where storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first metal-oxide-semiconductor (MOS) transistor. A gate of the first MOS transistor is coupled to the first storage bit, a source of the first MOS transistor is coupled to a first read line, and a drain of the first MOS transistor is coupled to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line, or in a second state, the second read line is a read word line, and the first read line is a read bit line. The storage unit according to embodiments of the present invention can implement an exchange between a read word line and a read bit line.

Abstract: A microstrip filter is provided in the present disclosure. The microstrip filter includes a substrate having a first surface and a second surface opposite to each other, a first spiral metal line formed on the first surface of the substrate, and a second spiral metal line formed on the second surface of the substrate. At least part of the first spiral metal line overlaps and is coupled to the second spiral metal line for forming a filter capacitor. The present disclosure also provides a microphone device using the microstrip filter.

Abstract: The present disclosure discloses a MEMS microphone including a MEMS chip, an ASIC chip and an injection molding package. The MEMS chip is stacked on and connected to the ASIC chip by a TSV connector. The MEMS chip comprises a substrate having a cavity, a back plate and a diaphragm for forming a capacitor structure. The cavity is divided by the capacitor structure into a rear acoustic cavity facing the ASIC chip and the front acoustic cavity opposite to the rear acoustic cavity. The size of the MEMS microphone is reduced effectively, as the MEMS chip is stacked on the ASIC chip and connected each other by a TSV connector.

Abstract: A microstrip filter is provided in the present disclosure. The microstrip filter includes a substrate having a first surface and a second surface opposite to each other, a first spiral metal line formed on the first surface of the substrate, and a second spiral metal line formed on the second surface of the substrate. At least part of the first spiral metal line overlaps and is coupled to the second spiral metal line for forming a filter capacitor. The present disclosure also provides a microphone device using the microstrip filter.

Abstract: The present disclosure discloses a MEMS microphone including a MEMS chip, an ASIC chip and an injection molding package. The MEMS chip is stacked on and connected to the ASIC chip by a TSV connector. The MEMS chip comprises a substrate having a cavity, a back plate and a diaphragm for forming a capacitor structure. The cavity is divided by the capacitor structure into a rear acoustic cavity facing the ASIC chip and the front acoustic cavity opposite to the rear acoustic cavity. The size of the MEMS microphone is reduced effectively, as the MEMS chip is stacked on the ASIC chip and connected each other by a TSV connector.