Abstract: A cylindrical battery includes an electrode assembly in which a first electrode, a second electrode, and a separator interposed therebetween are wound. The first electrode and the second electrode include a first uncoated portion and a second uncoated portion, respectively. At least one of the first uncoated portion and the second uncoated portion includes a core-side uncoated portion, an outer circumference uncoated portion, and an intermediate uncoated portion interposed therebetween. At least one of the core-side uncoated portion and the outer circumference uncoated portion has a relatively smaller height than the intermediate uncoated portion in a winding axis direction.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes a first active material portion coated with an active material layer and a first uncoated portion not coated with an active material layer along a winding direction. At least a part of the first uncoated portion is defined as an electrode tab by itself. The first uncoated portion includes a first portion adjacent to the core of the electrode assembly, a second portion adjacent to the outer circumference of the electrode assembly, and a third portion interposed between the first portion and the second portion. The first portion or the second portion has a smaller height than the third portion in the winding axis direction.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: Disclosed is a selected screen reproducing method for a video compact disc reproducing system previously programmied by a user with the corresponding sound for the scheduled time, and to apparatus thereof. Since a specific screen data is stored while reproducing an optical disc data on which data were recorded by an MPEG method, by selecting a specific screen playback mode, the screen and the corresponding sound are periodically outputted for a predetermined time, until now after the reproducing operation of the optical disc is completed. Thus, a user can reproduce a selected specific screen and the corresponding sound again. Further, editing a selected specific screen and the corresponding sound can be performed.

Abstract: A device for changing a frequency of an internal control clock for testing a chip, by incorporating a mode selection circuit (30) and a high voltage detection circuit (40) in a serial input/output memory. The mode selection circuit (30) is connected between two selected adjacent circuits C.sub.n-2, C.sub.n-1 among a plurality of frequency conversion circuits C.sub.1 . . . C.sub.n, for accessing selectively either a clock pulse CP.sub.n-2 from the frequency conversion circuit C.sub.n-2, arranged in front thereof or a system clock XSK, in dependence upon an internal voltage sense signal IV, IVB. The high voltage detection circuit (40) transmits the internal voltage sense signal to the mode selection circuit (30) by detecting a level of externally applied voltage XV. The internal control clock ICK provided by this device attains a period of T.sub.XSK .times.2.sup.n-M+1, wherein "M" is a number of the counter receiving the mode selection signals MS, MSB next to the mode selection circuit.

Abstract: In a nonvolatile semiconductor memory device having a plurality of word lines, bit lines, sense lines, nonvolatile semiconductor memory cells, column selecting transistors, a page buffer circuit, data lines, an input driver/sense amplifier, an input buffer an input/output register and a comparator, a secret access code is defined in such a manner that a first secret access code is latched in the page buffer circuit, a second secret access code inputted by the input buffer is compared with the first secret access code read by the input/output register by bytes in the comparator, and if the first and second access codes match, the first secret access code latched in the page buffer is written in the cells of the row line designated in advance among the nonvolatile memory cells.