Abstract: Integrated circuit structures having backside self-aligned conductive source or drain contacts, and methods of fabricating integrated circuit structures having backside self-aligned conductive source or drain contacts, are described. For example, an integrated circuit structure includes a sub-fin structure over a vertical stack of horizontal nanowires. An epitaxial source or drain structure is laterally adjacent and coupled to the vertical stack of horizontal nanowires. A conductive source or drain contact is laterally adjacent to the sub-fin structure and is on and in contact with the epitaxial source or drain structure. The conductive source or drain contact does not extend around the epitaxial source or drain structure.

Abstract: Techniques are provided herein to form semiconductor devices having epitaxial diffusion regions (e.g., source and/or drain regions) wrapped by a conductive contact. In an example, a semiconductor device includes a source or drain region and a conductive layer that extends around the source or drain region such that the conductive layer at least contacts the sidewalls of the source or drain region or wraps completely around the source or drain region. In some examples, a conducive contact extends upward through a thickness of an adjacent dielectric layer and contacts the conductive layer from below, thus forming a backside contact. By forming a conductive layer around multiple sides of the source or drain region (rather than just contacting a top or bottom surface) more surface area of the source or drain region is contacted thus providing an improved ohmic contact and a lower overall contact resistance.