Abstract: A single crystal or quasi-single crystal including one or more Group III material and an impurity. The impurity includes one or more elements from Group IA, Group IIA, Groups IIIB to VIIB, Group VIII, Group IB, Group IIB, or Group VIIA elements of the periodic table of elements. A composition for forming a crystal is also provided. The composition includes a source material comprising a Group III element, and a flux comprising one or more of P, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Pd, Ag, Hf, Ta, W, Pt, Au, Hg, Ge, or Sb; or the flux may comprise a rare earth metal.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing as a therapeutically active ingredient the same.

Abstract: A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: A process capable of depositing a diffusion coating of uniform thickness on localized surface regions of a component. The process makes use of an adhesive mixture containing a binding agent that is consumed as part of the deposition process so as not to negatively affect the quality and uniformity of the resulting coating. The process entails mixing a particulate donor material containing a coating element, a dissolved activator, and a particulate filler to form an adhesive mixture having a formable, malleable consistency. The adhesive mixture is applied to a surface of the component, and the component is heated to a temperature sufficient to vaporize and react the activator with the coating element of the donor material, thereby forming a reactive vapor of the coating element. The reactive vapor reacts at the surface of the component to form a diffusion coating containing the coating element.

Abstract: An element-doped diamond crystal is disclosed herein. The crystal includes at least one dopant element which has a greater concentration toward or near an outermost surface of the crystal than in the center of the crystal. The concentration of the dopant element is at a local minimum at least about 5 micrometers below the surface. The concentration-profile of the dopant element for these diamond crystals causes an expansion of the diamond lattice, thereby generating tangential compressive stresses at the surface of the diamond crystal. These stresses beneficially increase the compressive fracture strength of the diamond.

Abstract: In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106?). Said growing includes applying a temporally varying thermal gradient (100, 100?, 102, 102?) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106?), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

Abstract: Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cm−1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Abstract: Disclosed are a novel organic acid salt of amlodipine with superb physicochemical properties, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: A novel crystalline organic acid salt of amlodipine having improved physiochemical properties, a preparation method thereof and a pharmaceutical composition comprising the same are provided.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: Disclosed are a novel organic acid salt of amlodipine, its preparation method, and a pharmaceutical composition containing as a therapeutically active ingredient the same.

Abstract: Disclosed are a novel organic acid salt of amlodipine with superb physicochemical properties, its preparation method, and a pharmaceutical composition containing the same as a therapeutically active ingredient.

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract: Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.

Abstract: A method for coating a surface of a substrate, includes providing a substrate having a surface, and coating the surface with a foam suspension containing a powder suspended in a foam to form a coating on the surface. The substrate is then heat treated to densify the coating along the surface.

Abstract: A method for coating an internal surface of a substrate includes providing a substrate having an internal surface, coating a slurry on the internal surface, the slurry containing a metallic powder, and drying the slurry such that the slurry forms a metal-based coating on the substrate.