Abstract: A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-? gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.

Abstract: A bulk acoustic resonator assembly and methods for fabricated the resonator assembly is provided. The resonator includes a cavity on a first surface of a substrate, with a sheet of low acoustic loss material suspended over the cavity. The sheet of low acoustic loss material is configured such that an associated fundamental frequency of the sheet of low acoustic loss material is a function of a length of the sheet of low acoustic loss material in a direction parallel to the first surface of the substrate. A transducer includes an electromechanical layer on the sheet of low acoustic loss material and a patterned conductive material formed on the electromechanical material. The transducer is configured to induce vibrations in the low acoustic loss material upon application of an electrical signal to the conductive pattern.

Abstract: A bulk acoustic resonator assembly and methods for fabricated the resonator assembly is provided. The resonator includes a cavity on a first surface of a substrate, with a sheet of low acoustic loss material suspended over the cavity. The sheet of low acoustic loss material is configured such that an associated fundamental frequency of the sheet of low acoustic loss material is a function of a length of the sheet of low acoustic loss material in a direction parallel to the first surface of the substrate. A transducer includes an electromechanical layer on the sheet of low acoustic loss material and a patterned conductive material formed on the electromechanical material. The transducer is configured to induce vibrations in the low acoustic loss material upon application of an electrical signal to the conductive pattern.

Abstract: A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

Abstract: The present invention provides a MEMS piezoelectric switch that has an articulated unimorph bridge attached to a substrate. The bridge includes a passive layer of zirconia and at least one silicon-based material, an active layer of a piezoelectric material that has a high piezoelectric coefficient, at least one pair of interdigitated electrodes, disposed on the top surface of the active layer and across which the bias voltage is applied, and a top contact electrode. A bottom contact electrode is provided on the substrate, and signals flow through the switch when the top and bottom contact electrodes contact one another.

Abstract: A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

Abstract: An apparatus and a method for steering optical frequency beams using nanowire. A method includes providing one or more nanowire waveguide arrays, generating an optical frequency beam, wherein the optical frequency beam is incident on the one or more nanowire waveguide arrays, controlling the one or more nanowire waveguide arrays to produce a phase delay in the optical frequency beam as it traverses the nanowire waveguide array, wherein the phase delay causes the optical frequency beam to deflect upon exiting the one or more nanowire waveguide arrays, and steering the optical frequency beam exiting the one or more nanowire waveguide arrays by increasing or decreasing the phase delay, wherein the angle of deflection of the exiting optical frequency beam is determined by the amount of phase delay.

Abstract: The present invention provides methods for singulating microelectromechanical systems (MEMS) die from a wafer. A plurality of MEMS devices are formed on the top surface of a wafer, and a plurality of intersecting scribe lanes are then formed, on the bottom surface of the wafer, to define a plurality of dies, each including at least one MEMS device. The intersecting scribe lanes penetrate the wafer to a depth of about 80%, and the wafer is cleaved along the scribe lanes to separate each of the plurality of dies from the wafer.

Abstract: The present invention provides a MEMS piezoelectric switch that has an articulated unimorph bridge attached to a substrate. The bridge includes a passive layer of zirconia and at least one silicon-based material, an active layer of a piezoelectric material that has a high piezoelectric coefficient, at least one pair of interdigitated electrodes, disposed on the top surface of the active layer and across which the bias voltage is applied, and a top contact electrode. A bottom contact electrode is provided on the substrate, and signals flow through the switch when the top and bottom contact electrodes contact one another.

Abstract: The disclosed invention relates to achieving micromachined piezoelectrically-actuated diaphragms. The piezoelectric diaphragm includes a central, inactive electrode free region and an annular shaped interdigitated electrode adjacent to the outer periphery of the central region. The diaphragm also may have an inactive annular, electrode free region and an active central, interdigitated electrode region. The diaphragms may be used in, such as, miniature pumps. The pumps may include a plurality of chambers to generate peristaltic pumping of fluids.

Abstract: First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first silicon layer is initially mechanically reduced by around 80% to 90% of its thickness. The remaining silicon layer is further reduced by a plasma etch which may leave an uneven thickness. With appropriate masking the uneven thickness is made even by a second plasma etch. Remaining silicon is removed by a dry etch with XeF2 or BrF3 to expose the intermediate oxide layer. Prior to bonding, the semiconductor wafers may be provided with various semiconductor devices to which electrical connections are made through conducting vias formed through the exposed intermediate oxide layer.