Patents by Inventor Siliang Wang

Siliang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12078556
    Abstract: A capacitive flexible tactile sensor based on graded inclined micro-cylindrical structure, includes an upper electrode layer, a lower electrode layer and a dielectric layer between them. The dielectric layer is composed of an upper dielectric layer and a lower dielectric layer. The upper dielectric layer includes an upper dielectric layer base, upper dielectric layer long micro-cylinders and upper dielectric layer short micro-cylinders. The lower dielectric layer includes lower dielectric layer base, lower dielectric layer long micro-cylinder and lower dielectric layer short micro-cylinder. The upper dielectric layer long micro-cylinders and the lower dielectric layer long micro-cylinders are closely bonded, and there is a distance between the upper dielectric layer short micro-cylinder and the lower dielectric layer short micro-cylinder. The sensor structure of the present application is stable, overcomes the viscous effect.
    Type: Grant
    Filed: December 31, 2021
    Date of Patent: September 3, 2024
    Assignee: ANHUI UNIVERSITY
    Inventors: Liangpan Yang, Xiaohui Guo, Siliang Wang, Zhiliang Chen, Pengbin Gui, Wei Zeng, Lixia Yang, Yaohua Xu, Zhixiang Haung
  • Patent number: 12057502
    Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.
    Type: Grant
    Filed: March 27, 2024
    Date of Patent: August 6, 2024
    Assignee: Anhui University
    Inventors: Xingang Ren, Wei Zhi, Huping Ju, Zhixiang Huang, Gang Wang, Kaikun Niu, Siliang Wang, Yingsong Li, Xianliang Wu, Sungen Cao
  • Patent number: 12044584
    Abstract: A high sensitivity flexible three-dimensional force tactile sensor includes a hemispherical contact, wherein the hemispherical contact includes a tray with a groove on the surface and a hemispherical protrusion arranged in the groove. A flexible inverted cone component connected to the lower surface of the hemispherical contact, wherein a plurality of flexible triangular excitation electrode is arranged on the side surface of the flexible inverted cone component. A flexible common electrode surrounding part of the flexible triangular excitation electrode, wherein a first cavity with an opening is opened inside the flexible common electrode, parts of the flexible triangular excitation electrode and the flexible inverted cone component are arranged in the first cavity of the flexible common electrode. The flexible triangular excitation electrode and the flexible inverted cone component have no contact with the inner wall of the first cavity of the flexible common electrode to form an air cavity.
    Type: Grant
    Filed: December 31, 2021
    Date of Patent: July 23, 2024
    Assignee: ANHUI UNIVERSITY
    Inventors: Xiaohui Guo, Zhiliang Chen, Pengbin Gui, Siliang Wang, Wei Zeng, Xingang Ren, Lixia Yang, Yaohua Xu, Zhixiang Haung
  • Publication number: 20240243201
    Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.
    Type: Application
    Filed: March 27, 2024
    Publication date: July 18, 2024
    Inventors: Xingang REN, Wei ZHI, Huping JU, Zhixiang HUANG, Gang WANG, Kaikun NIU, Siliang WANG, Yingsong LI, Xianliang WU, Sungen CAO
  • Patent number: 11955735
    Abstract: A four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide, includes a flexible base. A ground plane, a radiation patch and a feeder are arranged on the flexible base. There are several resonant tanks on the feeder and the radiation patch. The flexible base is made of insulating flexible material, and the feeder, the radiation patch and the ground plane are made of conductive flexible material. The four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide of the present application can be prepared by layer-by-layer assembly technology, spray printing or printed circuit board technology, and has the advantages of miniaturization and low profile, compact structure, convenient production, good conformality, wearable and other advantages.
    Type: Grant
    Filed: December 31, 2021
    Date of Patent: April 9, 2024
    Assignee: ANHUI UNIVERSITY
    Inventors: Xiaohui Guo, Pengbin Gui, Siliang Wang, Liangpan Yang, Zhiliang Chen, Wei Zeng, Lixia Yang, Yaohua Xu, Zhixiang Haung
  • Publication number: 20240030609
    Abstract: A four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide, includes a flexible base. A ground plane, a radiation patch and a feeder are arranged on the flexible base. There are several resonant tanks on the feeder and the radiation patch. The flexible base is made of insulating flexible material, and the feeder, the radiation patch and the ground plane are made of conductive flexible material. The four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide of the present application can be prepared by layer-by-layer assembly technology, spray printing or printed circuit board technology, and has the advantages of miniaturization and low profile, compact structure, convenient production, good conformality, wearable and other advantages.
    Type: Application
    Filed: December 31, 2021
    Publication date: January 25, 2024
    Applicant: ANHUI UNIVERSITY
    Inventors: Xiaohui GUO, Pengbin GUI, Siliang WANG, Liangpan YANG, Zhiliang CHEN, Wei ZENG, Lixia YANG, Yaohua XU, Zhixiang HAUNG
  • Publication number: 20230296453
    Abstract: A capacitive flexible tactile sensor based on graded inclined micro-cylindrical structure, includes an upper electrode layer, a lower electrode layer and a dielectric layer between them. The dielectric layer is composed of an upper dielectric layer and a lower dielectric layer. The upper dielectric layer includes an upper dielectric layer base, upper dielectric layer long micro-cylinders and upper dielectric layer short micro-cylinders. The lower dielectric layer includes lower dielectric layer base, lower dielectric layer long micro-cylinder and lower dielectric layer short micro-cylinder. The upper dielectric layer long micro-cylinders and the lower dielectric layer long micro-cylinders are closely bonded, and there is a distance between the upper dielectric layer short micro-cylinder and the lower dielectric layer short micro-cylinder. The sensor structure of the present application is stable, overcomes the viscous effect.
    Type: Application
    Filed: December 31, 2021
    Publication date: September 21, 2023
    Applicant: ANHUI UNIVERSITY
    Inventors: Liangpan YANG, Xiaohui GUO, Siliang WANG, Zhiliang CHEN, Pengbin GUI, Wei ZENG, Lixia YANG, Yaohua XU, Zhixiang HAUNG
  • Publication number: 20230160761
    Abstract: A high sensitivity flexible three-dimensional force tactile sensor includes a hemispherical contact, wherein the hemispherical contact includes a tray with a groove on the surface and a hemispherical protrusion arranged in the groove. A flexible inverted cone component connected to the lower surface of the hemispherical contact, wherein a plurality of flexible triangular excitation electrode is arranged on the side surface of the flexible inverted cone component. A flexible common electrode surrounding part of the flexible triangular excitation electrode, wherein a first cavity with an opening is opened inside the flexible common electrode, parts of the flexible triangular excitation electrode and the flexible inverted cone component are arranged in the first cavity of the flexible common electrode. The flexible triangular excitation electrode and the flexible inverted cone component have no contact with the inner wall of the first cavity of the flexible common electrode to form an air cavity.
    Type: Application
    Filed: December 31, 2021
    Publication date: May 25, 2023
    Applicant: ANHUI UNIVERSITY
    Inventors: Xiaohui GUO, Zhiliang CHEN, Pengbin GUI, Siliang WANG, Wei ZENG, Xingang REN, Lixia YANG, Yaohua XU, Zhixiang HAUNG
  • Publication number: 20080203013
    Abstract: Disclosed is a oxidation resistant composite reverse osmosis membrane, comprising a porous support and a polyamide layer, in which the polyamide layer is modified by an agent so that the membrane retains a salt rejection of at least 85% after being subjected to an aqueous solution of NaClO having a concentration of about 2,000 to 30,000 ppm for about one hour. A process of preparing the membrane is also disclosed.
    Type: Application
    Filed: August 27, 2007
    Publication date: August 28, 2008
    Applicant: VONTRON MEMBRANE TECHNOLOGY CO., LTD.
    Inventors: Xiaoyang Zhao, Yaohua He, Zongce Wu, Zhiqi Cai, Siliang Wang, Changyu Long, Feng Liu