Abstract: There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in the reaction pipe, a sensing unit configured to output level information based on the height of a fluidized bed which is changeable according to the growth of the polycrystal silicon, and a particle outlet configured to exhaust the polycrystal silicon formed in the reaction pipe outside, when the height of the fluidized bed corresponding to the level information is larger than an exhaustion start height of the fluidized bed corresponding to a start level.