Abstract: A semiconductor device and a method for manufacturing the same; the method includes: forming a first plate of a high-voltage capacitor; forming interlayer dielectric layers over the first plate of the high-voltage capacitor as dielectric layers of the high-voltage capacitor; etching the interlayer dielectric layers to form a deep trench; forming a first plate of the silicon capacitor on a sidewall and a bottom of the deep trench, the first plate of the silicon capacitor being connected with the first plate of the high-voltage capacitor; forming a dielectric layer of the silicon capacitor on the sidewall and the bottom of the deep trench; forming a second plate of the silicon capacitor in the deep trench; and forming a second plate of the high-voltage capacitor over the top interlayer dielectric layer. The manufacturing of the high-voltage capacitor and the silicon capacitor is integrated in one process, saving the manufacturing cost.