Patents by Inventor Silke Auchter

Silke Auchter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347223
    Abstract: A device (100) for controlling trapped ions (180) includes a first semiconductor substrate (120) comprising a semiconductor and/or dielectric material. A first micro-fabricated electrode structure (125) is disposed at a main side of the first substrate (120). The device (100) further includes a second substrate (140) comprising a semiconductor and/or dielectric material. A second micro-fabricated electrode structure (145) is disposed at a main side of the second substrate (140) opposite the main side of the first substrate (120). A plurality of spacer members (160) is disposed between the first substrate (120) and the second substrate (140). At least one ion trap is configured to trap ions (180) in a space between the first substrate (120) and the second substrate (140). The first micro-fabricated electrode structure (125) and the second micro-fabricated electrode structure (145) comprise electrodes of the ion trap.
    Type: Application
    Filed: July 12, 2022
    Publication date: October 17, 2024
    Inventors: Clemens Rössler, Silke Auchter, Gerald Stocker, Sokratis Sgouridis, Chiara Decaroli, Jonathan Home, Marco Valentini, Yves Colombe, Philip Holz
  • Publication number: 20240213193
    Abstract: A device for trapping ions includes: a substrate having a metal layer structure; and at least one ion trap configured to trap ions in a space over the substrate. The metal layer structure is a multi-layer metal structure that includes: a top metal layer having one or more electrodes forming part of the at least one ion trap; a redistribution metal layer having wiring for connecting the one or more electrodes; a first insulating layer arranged between the top metal layer and the redistribution layer and having one or more voids; and one or more connection elements arranged in the one or more voids that connect the wiring from the redistribution metal layer with the one or more electrodes in the top metal layer.
    Type: Application
    Filed: March 4, 2024
    Publication date: June 27, 2024
    Inventors: Clemens Roessler, Silke Auchter, Martin Gruber, Johanna Elisabeth Roessler
  • Patent number: 11984416
    Abstract: A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer including an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: May 14, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Clemens Roessler, Silke Auchter, Martin Gruber, Johanna Elisabeth Roessler
  • Patent number: 11721537
    Abstract: A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Clemens Roessler, Silke Auchter, Johanna Elisabeth Roessler, Gerald Stocker
  • Publication number: 20230009741
    Abstract: A device for controlling trapped ions includes a first substrate of a semiconductor and/or dielectric material. A first metal structure is disposed at a main side of the first substrate. The device further includes a second substrate of a semiconductor and/or dielectric material. A second metal structure is disposed at a main side of the second substrate opposite the main side of the first substrate. A spacer is disposed between and bonded to the first and second substrates. The spacer includes an electrical interconnect which electrically connects the first metal structure to the second metal structure. A bond between the spacer and the first substrate or the spacer and the second substrate is a bond formed by waferbonding. At least one ion trap is configured to trap ions in a space between the first and second substrates, the first and second metal structures including electrodes of the ion trap.
    Type: Application
    Filed: July 12, 2022
    Publication date: January 12, 2023
    Inventors: Clemens Roessler, Silke Auchter, Johanna Elisabeth Roessler
  • Publication number: 20220102301
    Abstract: A device for controlling trapped ions includes a first semiconductor substrate. A second semiconductor substrate is disposed over the first semiconductor substrate. At least one ion trap is configured to trap ions in a space between the first semiconductor substrate and the second semiconductor substrate. A spacer is disposed between the first semiconductor substrate and the second semiconductor substrate, the spacer including an electrical interconnect which electrically connects a first metal layer structure of the first semiconductor substrate to a second metal layer structure of the second semiconductor substrate.
    Type: Application
    Filed: September 29, 2021
    Publication date: March 31, 2022
    Inventors: Clemens Roessler, Silke Auchter, Martin Gruber, Johanna Elisabeth Roessler
  • Publication number: 20220102134
    Abstract: A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.
    Type: Application
    Filed: September 29, 2021
    Publication date: March 31, 2022
    Inventors: Clemens Roessler, Silke Auchter, Johanna Elisabeth Roessler, Gerald Stocker