Abstract: A first circuit is configured to perform a Boolean logic, the first circuit configured to receive via bit lines, a first input signal and a second input signal, where the first input signal and the second input signal are dynamic signals that are complementary signals during an evaluation phase. The first circuit is further configured to receive a third input signal and a fourth input signal via data lines. A second circuit is connected to the first circuit and configured to control a logical behavior of the first circuit by controlling at least one of: the third input signal and the fourth input signal, received at the first circuit.

Abstract: Performing a read operation and a clear operation in a late select array in the same clock cycle, including: receiving, for a late select array stored in memory of a processor, a read operation instruction and a clear operation instruction; executing both the read operation instruction and the clear operation instruction in a single clock cycle, including: loading an entry of the late select array corresponding to a read address included in the read operation instruction; generating a hit result for the read operation instruction based on the entry, wherein the hit result indicates whether a cache stores valid data corresponding to the read operation instruction; clearing an entry of the late select array corresponding to a write address included in the clear operation instruction; and providing an output of the read operation instruction based on a comparison of the read address included in the read operation instruction and the write address included in the clear operation instruction.

Abstract: Performing a read operation and a clear operation in a late select array in the same clock cycle, including: receiving, for a late select array stored in memory of a processor, a read operation instruction and a clear operation instruction; executing both the read operation instruction and the clear operation instruction in a single clock cycle, including: loading an entry of the late select array corresponding to a read address included in the read operation instruction; generating a hit result for the read operation instruction based on the entry, wherein the hit result indicates whether a cache stores valid data corresponding to the read operation instruction; clearing an entry of the late select array corresponding to a write address included in the clear operation instruction; and providing an output of the read operation instruction based on a comparison of the read address included in the read operation instruction and the write address included in the clear operation instruction.

Abstract: A memory device comprising at least one memory bank is provided and comprises a two-dimensional array of memory cells, a plurality of local bit lines connecting all memory cells in a first dimension of the two-dimensional array, a plurality of word lines connecting all memory cells in a second dimension of the two-dimensional array. The memory device further comprises at least one array of assist cells per memory bank, each array having one shared sense line and being arranged along memory cells and connected to by a bit line. The assist cells are configured as modified memory cells with a common sense line to provide a sense amplifier functionality. An assist cell and a double assist cell for a memory device are also provided.

Abstract: A memory device comprising at least one memory bank is provided and comprises a two-dimensional array of memory cells, a plurality of local bit lines connecting all memory cells in a first dimension of the two-dimensional array, a plurality of word lines connecting all memory cells in a second dimension of the two-dimensional array. The memory device further comprises at least one array of assist cells per memory bank, each array having one shared sense line and being arranged along memory cells and connected to by a bit line. The assist cells are configured as modified memory cells with a commonsense line to provide a sense amplifier functionality. An assist cell and a double assist cell for a memory device are also provided.

Abstract: A processor-implemented method for automatically generating a layout of a cell of a semiconductor circuit is provided herein. The processor-implemented method includes reading a netlist of the cell. The netlist includes a description of internal electrical nets connecting electrical components of the cell with each other. The processor-implemented method assigning a weight to an internal net of the internal electrical nets and placing the electrical components in an area of the semiconductor circuit based on the netlist and the weight to generate the layout of the cell of the semiconductor circuit.

Abstract: A processor-implemented method for automatically generating a layout of a cell of a semiconductor circuit is provided herein. The processor-implemented method includes reading a netlist of the cell. The netlist includes a description of internal electrical nets connecting electrical components of the cell with each other. The processor-implemented method assigning a weight to an internal net of the internal electrical nets and placing the electrical components in an area of the semiconductor circuit based on the netlist and the weight to generate the layout of the cell of the semiconductor circuit.

Abstract: A processor-implemented method for automatically generating a layout of a cell of a semiconductor circuit is provided herein. The processor-implemented method includes reading a netlist of the cell. The netlist includes a description of internal electrical nets connecting electrical components of the cell with each other. The processor-implemented method assigning a weight to an internal net of the internal electrical nets and placing the electrical components in an area of the semiconductor circuit based on the netlist and the weight to generate the layout of the cell of the semiconductor circuit.

Abstract: A processor-implemented method for automatically generating a layout of a cell of a semiconductor circuit is provided herein. The processor-implemented method includes reading a netlist of the cell. The netlist includes a description of internal electrical nets connecting electrical components of the cell with each other. The processor-implemented method assigning a weight to an internal net of the internal electrical nets and placing the electrical components in an area of the semiconductor circuit based on the netlist and the weight to generate the layout of the cell of the semiconductor circuit.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: Generating layouts of nets connecting connection terminals of cells in an integrated circuit. Cell layouts of the cells with parameterized locations of the connection terminals, a connection specification of nets specifying electrical connections between the connection terminals, and design rules for the laying out of the nets, are received. A placed layout is generated with the cell layouts placed adjacent to each other in a row. The cell layouts are placed in the row enabling minimization of a selected function. According to the design rules, the nets are laid out as straight interconnects being parallel to a reference straight line using the parameterized locations of the connection terminals in the cell layouts. The laying out includes varying locations of the parameterized locations of the interconnection terminals.

Abstract: Generating layouts of nets connecting connection terminals of cells in an integrated circuit. Cell layouts of the cells with parameterized locations of the connection terminals, a connection specification of nets specifying electrical connections between the connection terminals, and design rules for the laying out of the nets, are received. A placed layout is generated with the cell layouts placed adjacent to each other in a row. The cell layouts are placed in the row enabling minimization of a selected function. According to the design rules, the nets are laid out as straight interconnects being parallel to a reference straight line using the parameterized locations of the connection terminals in the cell layouts. The laying out includes varying locations of the parameterized locations of the interconnection terminals.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: A memory array can include a global evaluation circuit, a local evaluation circuit for evaluating a voltage level of a local bit line and a wake transistor configured to connect an output of the local evaluation circuit to a global bit line (GBL) of the global evaluation circuit. The global evaluation circuit can include a holding circuit. The wake transistor can be turned on in response to a read signal, and remain on while the GBL is precharged to a logical “high” voltage. Memory cells connected to the at least one local bit line can be addressed, and the local bit line can be pulled to a logical “low” voltage for a first time period. The GBL can be pulled to a logical low voltage for a second time period, and the holding circuit polarity can be reversed during a third time period.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: A memory array can include a global evaluation circuit, a local evaluation circuit for evaluating a voltage level of a local bit line and a wake transistor configured to connect an output of the local evaluation circuit to a global bit line (GBL) of the global evaluation circuit. The global evaluation circuit can include a holding circuit. The wake transistor can be turned on in response to a read signal, and remain on while the GBL is precharged to a logical “high” voltage. Memory cells connected to the at least one local bit line can be addressed, and the local bit line can be pulled to a logical “low” voltage for a first time period. The GBL can be pulled to a logical low voltage for a second time period, and the holding circuit polarity can be reversed during a third time period.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: Generating layouts of nets connecting connection terminals of cells in an integrated circuit. Cell layouts of the cells with parameterized locations of the connection terminals, a connection specification of nets specifying electrical connections between the connection terminals, and design rules for the laying out of the nets, are received. A placed layout is generated with the cell layouts placed adjacent to each other in a row. The cell layouts are placed in the row enabling minimization of a selected function. According to the design rules, the nets are laid out as straight interconnects being parallel to a reference straight line using the parameterized locations of the connection terminals in the cell layouts. The laying out includes varying locations of the parameterized locations of the interconnection terminals.

Abstract: Generating layouts of nets connecting connection terminals of cells in an integrated circuit. Cell layouts of the cells with parameterized locations of the connection terminals, a connection specification of nets specifying electrical connections between the connection terminals, and design rules for the laying out of the nets, are received. A placed layout is generated with the cell layouts placed adjacent to each other in a row. The cell layouts are placed in the row enabling minimization of a selected function. According to the design rules, the nets are laid out as straight interconnects being parallel to a reference straight line using the parameterized locations of the connection terminals in the cell layouts. The laying out includes varying locations of the parameterized locations of the interconnection terminals.

Abstract: It is provided a memory circuit comprising n inputs; n+1 columns, wherein each column is connected to a plurality of memory cells; wherein the i-th (1?i?n?1) column is configured to be conductive connectable to the i-th input or to the (i+1)-th input or neither to the i-th input nor to the (i+1)-th input; a first FET and a second FET in series configured for connecting the i-th column to a defined voltage level; wherein a first gate signal renders the first FET conductive, if the i-th column is not in conductive connection with the i-th input; wherein a second gate signal renders the second FET conductive, if the i-th column is not in conductive connection with the (i+1)-th input.