Patents by Inventor Silvanius S. Lau

Silvanius S. Lau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PdIn ohmic contact to GaAs
    Patent number: 5045502
    Abstract: An ohmic contact to a semiconductor such as GaAs and its method of making in which a thin layer of Pd is overlaid preferably with a layer of Group-IV element such as Ge followed by another layer of Pd. This structure is then overlaid with a layer of Pd and In. The atomic ratio of the Pd and In in the entire structure lies between 0.9 and 1.5. This structure is then annealed at a temperature between 350.degree. C. and 675.degree. C. There results a very thin crystalline layer of Ge-doped InGaAs adjacent the GaAs and an overlying PdIn alloy layer providing a contact resistance in the range of 0.1-1 .OMEGA.-mm.
    Type: Grant
    Filed: May 10, 1990
    Date of Patent: September 3, 1991
    Assignees: Bell Communications Research, Inc., University of California
    Inventors: Silvanius S. Lau, Timothy D. Sands, Long-Ching Wang