Patents by Inventor Silvano De Franceschi

Silvano De Franceschi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum device with spin qubits
    Patent number: 10607993
    Abstract: A quantum device with spin qubits, comprising: a first semiconducting layer comprising a first matrix of data qubits and measurement qubits connected to each other through tunnel barriers; means of addressing qubits configured for controlling conduction of each tunnel barrier by the field effect and comprising: first and second conducting portions arranged in first and second superposed metallisation levels respectively; first and second conducting vias each comprising a first end connected to one of the first and second conducting portions respectively, and a second end located facing one of the tunnel barriers; a first dielectric layer interposed between the tunnel barriers and the second ends of the first and second conducting vias.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: March 31, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Louis Hutin, Silvano De Franceschi, Tristan Meunier, Maud Vinet
  • QUANTUM DEVICE WITH SPIN QUBITS
    Publication number: 20180331108
    Abstract: A quantum device with spin qubits, comprising: a first semiconducting layer comprising a first matrix of data qubits and measurement qubits connected to each other through tunnel barriers; means of addressing qubits configured for controlling conduction of each tunnel barrier by the field effect and comprising: first and second conducting portions arranged in first and second superposed metallisation levels respectively; first and second conducting vias each comprising a first end connected to one of the first and second conducting portions respectively, and a second end located facing one of the tunnel barriers; a first dielectric layer interposed between the tunnel barriers and the second ends of the first and second conducting vias.
    Type: Application
    Filed: May 1, 2018
    Publication date: November 15, 2018
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Louis Hutin, Silvano De Franceschi, Tristan Meunier, Maud Vinet
  • Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid
    Patent number: 9034668
    Abstract: Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: May 19, 2015
    Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Massimo Mongillo, Silvano De Franceschi, Panayotis Spathis
  • DEVICE AND METHOD FOR FORMING ON A NANOWIRE MADE OF A SEMICONDUCTOR AN ALLOY OF THIS SEMICONDUCTOR WITH A METAL OR A METALLOID
    Publication number: 20130203191
    Abstract: Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.
    Type: Application
    Filed: July 13, 2011
    Publication date: August 8, 2013
    Applicant: Commissariat a L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Massimo Mongillo, Silvano De Franceschi, Panayotis Spathis
  • FIELD-EFFECT TRANSISTOR ON A SELF-ASSEMBLED SEMICONDUCTOR WELL
    Publication number: 20130193484
    Abstract: A device including at least one transistor on a substrate in a first semiconductor material, each transistor including a gate electrode as a gate, two conductor electrodes, an island in a second semiconductor material inlaid in the substrate, defining a region capable of forming a channel as a channel region, and an insulating layer separating the gate from the two electrodes and the channel region. The channel region is inside the island and is in direct electrical contact with at least one of the two conductor electrodes.
    Type: Application
    Filed: October 6, 2011
    Publication date: August 1, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Georgios Katsaros, Silvano De Franceschi