Patents by Inventor Silvia Gabardi

Silvia Gabardi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transition metal doped germanium-antimony tellurium (GST) memory device components and composition
    Patent number: 11056649
    Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: July 6, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Fantini, Marco Bernasconi, Silvia Gabardi
  • TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DEVICE COMPONENTS AND COMPOSITION
    Publication number: 20200335696
    Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
    Type: Application
    Filed: May 7, 2020
    Publication date: October 22, 2020
    Inventors: Paolo Fantini, Marco Bernasconi, Silvia Gabardi
  • Transition metal doped germanium-antimony-tellurium (GST) memory device components and composition
    Patent number: 10686131
    Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: June 16, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Fantini, Marco Bernasconi, Silvia Gabardi
  • TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DEVICE COMPONENTS AND COMPOSITION
    Publication number: 20200066986
    Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
    Type: Application
    Filed: August 1, 2019
    Publication date: February 27, 2020
    Inventors: Paolo Fantini, Marco Bernasconi, Silvia Gabardi
  • Transition metal doped germanium-antimony-tellurium (GST) memory device components and composition
    Patent number: 10418552
    Abstract: Methods, systems, and devices for operating memory cell(s) using transition metal doped GST are described. As discussed herein, a composition including germanium (Ge), antimony (Sb), tellurium (Te), and at least one of yttrium (Y) and scandium (Sc) may be used as a memory element in a memory cell. For example, a memory element may include a composition having Ge in an amount ranging from 15 to 35 atomic percent (at. %) of the composition, Sb in an amount less than or equal to 50 at. % of the composition, Te in an amount greater than or equal to 40 at. % of the composition, and at least one of Y and Sc in an amount ranging from 0.15 to 10 at. % of the composition.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 17, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Fantini, Marco Bernasconi, Silvia Gabardi