Patents by Inventor Silvia Larisegger

Silvia Larisegger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11282757
    Abstract: A semiconductor device includes a semiconductor substrate and a metal structure in electrical contact with the semiconductor substrate. The metal structure has copper as a main component. An encapsulation layer includes a matrix material and a releasable copper corrosion inhibitor dispersed in the matrix material. The matrix material of the encapsulation layer at least partially covers the metal structure. A protective layer is at least partially on and in contact with a surface of the metal structure, and disposed between the metal structure and the encapsulation layer.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: March 22, 2022
    Assignee: Infineon Technologies Austria AG
    Inventors: Sabine Reither, Guenter Fafilek, Silvia Larisegger
  • Patent number: 10937720
    Abstract: A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: March 2, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Silvia Larisegger, Michael Nelhiebel, Sabine Reither
  • Publication number: 20190304884
    Abstract: A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.
    Type: Application
    Filed: March 28, 2019
    Publication date: October 3, 2019
    Inventors: Silvia Larisegger, Michael Nelhiebel, Sabine Reither
  • Publication number: 20190088563
    Abstract: A semiconductor device includes a semiconductor substrate and a metal structure in electrical contact with the semiconductor substrate. The metal structure has copper as a main component. An encapsulation layer includes a matrix material and a releasable copper corrosion inhibitor dispersed in the matrix material. The matrix material of the encapsulation layer at least partially covers the metal structure. A protective layer is at least partially on and in contact with a surface of the metal structure, and disposed between the metal structure and the encapsulation layer.
    Type: Application
    Filed: September 13, 2018
    Publication date: March 21, 2019
    Inventors: Sabine Reither, Guenter Fafilek, Silvia Larisegger