Patents by Inventor Silvia Rossini

Silvia Rossini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micromechanical mirror structure with improved mechanical and reflectivity features and corresponding manufacturing process
    Patent number: 11137592
    Abstract: A micromechanical mirror structure includes a mirror element designed to reflect an incident light radiation and a protective structure arranged over the mirror element to provide mechanical protection for the mirror element and to increase the reflectivity of the mirror element with respect to the incident light radiation. The protective structure has a first protective layer and a second protective layer which are stacked on the mirror element. The second protective layer is arranged on the first protective layer and the first protective layer is arranged on the mirror element. The layers include a respective dielectric material and having respective refractive indexes that jointly increase the reflectivity of the mirror element in a range of wavelengths of interest.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: October 5, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventors: Luca Lamagna, Stefano Losa, Silvia Rossini, Federico Vercesi, Elena Cianci, Graziella Tallarida, Claudia Wiemer
  • MICROMECHANICAL MIRROR STRUCTURE WITH IMPROVED MECHANICAL AND REFLECTIVITY FEATURES AND CORRESPONDING MANUFACTURING PROCESS
    Publication number: 20190219816
    Abstract: A micromechanical mirror structure includes a mirror element designed to reflect an incident light radiation and a protective structure arranged over the mirror element to provide mechanical protection for the mirror element and to increase the reflectivity of the mirror element with respect to the incident light radiation. The protective structure has a first protective layer and a second protective layer which are stacked on the mirror element. The second protective layer is arranged on the first protective layer and the first protective layer is arranged on the mirror element. The layers include a respective dielectric material and having respective refractive indexes that jointly increase the reflectivity of the mirror element in a range of wavelengths of interest.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 18, 2019
    Applicant: STMicroelectronics S.r.l.
    Inventors: Lucas LAMAGNA, Stefano LOSA, Silvia ROSSINI, Federico VERCESI, Elena CIANCI, Graziella TALLARIDA, Claudia WIEMER
  • Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors
    Patent number: 9978936
    Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: May 22, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
  • POST DEPOSITION ADJUSTMENT OF CHALCOGENIDE COMPOSITION IN CHALCOGENIDE CONTAINING SEMICONDUCTORS
    Publication number: 20150034897
    Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
    Type: Application
    Filed: October 20, 2014
    Publication date: February 5, 2015
    Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
  • Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors
    Patent number: 8865514
    Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: October 21, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini
  • Post Deposition Adjustment of Chalcogenide Composition in Chalcogenide Containing Semiconductors
    Publication number: 20120112150
    Abstract: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
    Type: Application
    Filed: November 9, 2010
    Publication date: May 10, 2012
    Inventors: Davide Erbetta, Camillo Bresolin, Silvia Rossini