Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a table rotatable around a first axis, a first holder being arranged in a non-rotatable or rotatable manner on a first side of the table and at least one means for processing a substrate in the first substrate plane and directing towards the first side of the table. Furthermore, the substrate processing apparatus includes a pyrometer being arranged on a second side of the table, the second side of the table facing away from the first side of the table, and an optically operative connection between the pyrometer and the side of a substrate, when positioned on the first holder, facing away from the at least one means for processing a substrate. Furthermore, a method of measuring the temperature of a moving substrate and the use of a substrate processing apparatus for measuring the temperature of a substrate are provided.

Abstract: Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

Abstract: A method of producing hydrogen ions includes generating a diode-type HF plasma PL. This allows to set or adjust the energy of ions output by the plasma source in an improved manner.

Abstract: In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

Abstract: Vacuum-treating a substrate or manufacturing a vacuum-treated substrate, including the steps: exposing a substrate in a vacuum chamber to a plasma environment, the plasma environment including a first plasma of a material deposition source and a second plasma of a non-deposition source; operating the plasma environment repeatedly between a first and a second state, the first state being defined by: a higher plasma supply power to the first plasma causing a higher material deposition rate and a lower plasma supply power delivered to the second plasma, the second state being defined by: a lower plasma supply power to the first plasma, compared with the higher plasma supply power to the first plasma and causing a lower material deposition rate and a higher plasma supply power to the second plasma, compared with the lower plasma supply power to the second plasma. Also, a vacuum deposition apparatus adapted to perform the method.