Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

Abstract: Disclosed herein are embodiments of an automated, fast and efficient method of generating a customized compact model that represents a semiconductor device at the chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically, measurement data is collected from a specific manufacturing environment and sorted by channel lengths. Then, an optimizer is used to generate customized modeling parameters based on the measurement data. The optimization processes is a multi-step process. First, a first set of modeling parameters is generated based on measurement data associated with a long channel length. Second, a second set of modeling parameters is generated based on the first set and on measurement data associated with a short channel length. Finally, the customized modeling parameters are generated based on both the first set and the second set. The customized modeling parameters are used to generate a customized compact device model representative of the specific manufacturing environment.

Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

Abstract: Disclosed herein are embodiments of an automated, fast and efficient method of generating a customized compact model that represents a semiconductor device at the chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically, measurement data is collected from a specific manufacturing environment and sorted by channel lengths. Then, an optimizer is used to generate customized modeling parameters based on the measurement data. The optimization processes is a multi-step process. First, a first set of modeling parameters is generated based on measurement data associated with a long channel length. Second, a second set of modeling parameters is generated based on the first set and on measurement data associated with a short channel length. Finally, the customized modeling parameters are generated based on both the first set and the second set. The customized modeling parameters are used to generate a customized compact device model representative of the specific manufacturing environment.