Abstract: There is provided a method of fabrication of the high voltage diode, the method includes (i) forming a temporary first contact mask above a highly doped region of a first doping type, the highly doped region is located above a portion of a P-N junction that is formed by a pair of layers of different doping types that are located above a highly doped substrate of a second doping type; (ii) forming a trench at an edge region, after a completion of the forming of the temporary first contact mask, the trench passes through the pair of layers and penetrates the highly doped substrate; (iii) forming a passivation layer on at least the trench; (iv) removing the temporary first contact mask to provide a first contact space; (v) forming the first contact at the first contact space by performing metal deposition that uses a shadow mask to deposit metal at the first contact space to provide an intermediate semiconductor item; and (vi) dicing the intermediate semiconductor item at the trench to provide the high voltage d