Abstract: A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

Abstract: The method of producing an electronic component (100) comprises a step A) of providing a semiconductor chip (2) having an underside (20), having a plurality of contact pins (21), and having at least one positioning pin (25) protruding from the underside. The contact pins are adapted to electrically contact the semiconductor chip. The positioning pin narrows in the direction away from the underside and protrudes further from the underside than the contact pins. The semiconductor chip is placed on the connection carrier, with the contact pins each being inserted into a contact recess and the positioning pin being inserted into the positioning recess. The contact pins are immersed in the molten solder material.

Abstract: In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts

Abstract: In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

Abstract: A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively

Abstract: In an embodiment a method includes arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer includes a plurality of first semiconductor optoelectronic components, separating a plurality of the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier and attaching the first components separated from the first semiconductor wafer to the carrier, wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.

Abstract: In an embodiment, a method for producing a radiation-emitting semiconductor device includes providing a carrier plate having contact elements, applying a radiation-emitting semiconductor chip to the carrier plate, epitaxially producing first conversion elements, epitaxially producing second conversion elements and applying the first conversion elements and the second conversion elements to the semiconductor chip, wherein the semiconductor chip includes emitter regions for emitting primary electromagnetic radiation from a radiation exit area, wherein the first conversion elements are simultaneously applied to at least some of the emitter regions after the epitaxial fabrication, and wherein the first conversion elements and the second conversion elements are arranged in a common plane.

Abstract: In an embodiment, an adhesive stamp includes a plurality of variable-length stamp bodies arranged in an array, wherein each stamp body has an adhesive surface on a head portion of the stamp body, the adhesive surface configured to hold a semiconductor chip, wherein a first electrode is arranged in the head portion, wherein the first electrode is chargeable and whose polarity is changeable, wherein a second electrode is arranged in a foot portion of the stamp body, wherein the second electrode is chargeable and whose polarity is changeable, wherein a length of the stamp body is variable depending on charges applied to the first electrode and the second electrode, and wherein the adhesive stamp is configured to transfer semiconductor chips.

Abstract: In an embodiment a method includes providing a semiconductor chip having a plurality of contact pins, at least one positioning pin and an underside, wherein the contact pins and the positioning pin protrude from the underside, respectively, wherein the contact pins are configured for making electrical contact with the semiconductor chip, wherein the positioning pin narrows in a direction away from the underside, and wherein the positioning pin protrudes further from the underside than the contact pins, providing a connection carrier having a plurality of contact recesses, at least one positioning recess and an upper side, wherein each contact recess is at least partially filled with a solder material, heating the solder material in the contact recesses to a joining temperature at which the solder material at least partially melts and placing the semiconductor chip on the connection carrier, wherein each contact pin is inserted into a contact recess and the positioning pin is inserted into the positioning rece

Abstract: In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

Abstract: The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.

Abstract: In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.

Abstract: A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively

Abstract: A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

Abstract: The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).

Abstract: An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.