Abstract: Grinding systems and methods for semiconductor workpieces are provided. In one example, a grinding system includes a workpiece support operable to support a semiconductor workpiece and rotate the semiconductor workpiece about a first axis. The grinding system further includes a grind wheel operable to rotate about a second axis. The grind wheel has a plurality of grinding teeth arranged in a grinding ring on the grind wheel. A radius of the grinding ring is less than or equal to a radius of the semiconductor workpiece (e.g., such that an effective gap ratio between grinding teeth on the grind wheel are reduced).

Abstract: Systems and methods for grinding semiconductor workpieces are provided. In one example, a method includes providing a surface of the semiconductor workpiece against a grinding apparatus. The grinding apparatus includes an abrasive surface. The method further includes imparting relative motion between the abrasive surface and the semiconductor workpiece to implement a grinding operation on the semiconductor workpiece. The method further includes providing a fluid to the surface of the semiconductor workpiece or the abrasive surface during the grinding operation. The fluid includes an additive. The additive includes one or more of an oxidizing agent, an etchant, a surfactant, or a lubricant.

Abstract: Coordination complexes are provided comprising at least one metal atom; and organic ligands comprising one or more coordination sites associating with the at least one metal atom. Related methods and articles having a metal carbide coating are also provided, the metal carbide coating being derived from one or more coordination complexes.

Abstract: An organometallic compound is provided which includes a central metal atom; and organic ligands capable of forming polydentate bonds to the central metal atom. Related methods and articles having a metal carbide coating are also provided.

Abstract: Systems and methods for treatment of graphite structure for use in, for instance, crystal growth systems or deposition systems are provided. In one example, the method includes implementing a treatment process to a graphite structure to alter one or more characteristics of the graphite structure to produce a treated graphite structure. The method includes providing the treated graphite structure to a crystal growth system or a deposition system. At least a portion of the treated graphite structure has an exposed graphite surface within the crystal growth system or the deposition system.

Abstract: Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Systems and methods to process a semiconductor workpiece are provided. One example method includes providing a semiconductor workpiece having a subsurface damage region. The method includes performing a treatment process on the subsurface damage region. The treatment process includes providing a treatment emission of radiation from a radiation source to the subsurface damage region of the workpiece at a non-perpendicular angle relative to the subsurface damage region.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Methods and systems for processing semiconductor workpieces are provided. In one example, a system includes one or more laser source(s) having emission parameters configured to induce a nonthermal lattice modification in a semiconductor workpiece and one or more energy source(s) having different emission parameters relative to the laser source(s). The system is configured to induce a treatment region in the semiconductor workpiece with a laser emission from the laser source(s). The system is further configured to induce a damage region at the treatment region with an energy exposure from the energy source(s). In some examples, the system is further configured to perform a pre-separation treatment process on the damage region and, subsequent to the pre-separation treatment process, separate the semiconductor workpiece along the damage region using a removal process to produce one or more semiconductor die.

Abstract: Grinding systems and methods for semiconductor workpieces are provided. In one example, a grinding system includes a workpiece support operable to support a semiconductor workpiece and rotate the semiconductor workpiece about a first axis. The grinding system further includes a grind wheel operable to rotate about a second axis. The grind wheel has a plurality of grinding teeth arranged in a grinding ring on the grind wheel. A radius of the grinding ring is less than or equal to a radius of the semiconductor workpiece (e.g., such that an effective gap ratio between grinding teeth on the grind wheel are reduced).

Abstract: Systems and methods for polishing semiconductor workpieces are provided. In one example, the polishing system includes a platen operable to rotate about an axis. The polishing system further includes a polishing pad on the platen. The polishing system further includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the polishing pad. The polishing pad includes a first zone and a second zone.

Abstract: Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

Abstract: A slurry for electrochemical mechanical polishing of semiconductor workpieces (e.g., silicon carbide semiconductor wafers) is provided. In one example embodiment, the slurry contains a solvent an abrasive particle, and an ionic compound. The ionic compound contains a cation and an anion. One or more of the cation or the anion is bonded to the abrasive particle, for instance, with a functional group or other bonding.

Abstract: An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

Abstract: Systems and methods for surface processing of a semiconductor workpiece, such as a silicon carbide semiconductor wafer, are provided. An example surface processing system includes a platen configured to rotate about an axis. The example surface processing system includes a surface processing pad on the platen. The example surface processing system includes a workpiece carrier operable to bring a semiconductor workpiece into contact with the surface processing pad. The workpiece carrier includes a head and a retaining ring around at least a portion of the head. At least one of the head and the retaining ring is movable relative to each other.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Systems and methods for laser-based surface processing operations on a wide bandgap semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface, the semiconductor workpiece including silicon carbide. The method includes providing a filler material on at least a portion of the surface. The method includes, subsequent to providing the filler material, performing a surface processing operation on the surface.

Abstract: Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

Abstract: Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.