Abstract: Compositions and methods for the treatment of viral infections include conjugates containing inhibitors of viral neuraminidase (e.g., zanamivir, peramivir, or analogs thereof) linked to an Fc monomer, an Fc domain, and Fc-binding peptide, an albumin protein, or albumin-binding peptide. In particular, conjugates can be used in the treatment of viral infections (e.g., influenza viral infections).

Abstract: Hip labrum scaffolds are generally provided. In some embodiments, the hip labrum scaffolds described herein have one or more advantageous features. For instance, some hip labrum scaffolds may have one or more properties that facilitate tissue ingrowth and/or have beneficial mechanical properties.

Abstract: A refuse receptacle comprises a hollow body having a spine (1) upstanding from a base (2). Side panels (3) are connected through hinges (14) to the receptacle in which the sides of the panels remote from their respective hinges (4) are spaced apart from their respectable interior. A hoop (5) protrudes outwardly from the spine (1) for supporting a refuse bag or sack.

Abstract: A semiconductor laser amplifier includes both a waveguide layer and an active layer. In use, an optical wave in the active layer interacts with the waveguiding layer to reduce the polarisation sensitivity of the amplifier. A short, thick active layer is not required, typical dimensions being 250 or 500 .mu.m long, by 0.2 .mu.m high. The mesa is typically about 2 .mu.m wide, but may be wider.

Abstract: In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.

Abstract: It has been found that layers which include arsenic and/or zinc can have an adverse effect upon optoelectronic semiconductor devices such as lasers. This is reduced by treatments in which arsenic and zinc are excluded. Preferably the substrate is cooled from reaction temperature in the presence of a mixture of hydrogen and PH.sub.3 (replacing AsH.sub.3 and/or Zn(CH.sub.3).sub.2 used to grow the final layer). Alternatively, devices have a contact layer of heavily p-type gallium indium arsenide are improved by the deposition of a protective layer of indium phosphide. This layer is removed immediately before metalization. Even though the protective layer is not present in the final product it has a beneficial effect.