Abstract: A luminophore having the general empirical formula X?1-xA?y(Al1+zA?3-z)O4:E? that crystallizes in a tetragonal crystal system. X? may be Mg, Ca, Sr, Ba, and combinations thereof; A? may be Li, Na, K, Rb, Cs, and combinations thereof; E? may be Eu, Ce, Yb, Mn, and combinations thereof; 0<x<0.25; y?x; andz = 0.5 ( 2 ? x - y ) .

Abstract: A luminophore having the general empirical formula X?1?xA?y(Al1+zA?3?z)O4:E? that crystallizes in a tetragonal crystal system. X? may be Mg, Ca, Sr, Ba, and combinations thereof; A? may be Li, Na, K, Rb, Cs, and combinations thereof; E? may be Eu, Ce, Yb, Mn, and combinations thereof; 0<x<0.25; y?x; and z=0.5(2x?y).

Abstract: A phosphor may have the general formula EA2A4D3OxN8-x:RE. EA may be selected from the group of divalent elements. A may be selected from the group of monovalent, divalent or trivalent elements. D may be selected from the group of trivalent or tetravalent elements. RE may be an activator element. 0?x?8, and ?(4+4y+3z)=3(8?x)+2x with the charge number y of element A, the charge number z of element D, and ?=0.9-1.1.

Abstract: A luminophore having the general empirical formula X?1?xA?y(Al1+zA?3?z) O4:E? that crystallizes in a tetragonal crystal system. X? may be Mg, Ca, Sr, Ba, and combinations thereof; A? may be Li, Na, K, Rb, Cs, and combinations thereof; E? may be Eu, Ce, Yb, Mn, and combinations thereof; 0<x<0.25; y?x; and z=0.5(2x?y).

Abstract: A phosphor may have the general formula EA2A4D3OxN8-x:RE. EA may be selected from the group of divalent elements. A may be selected from the group of monovalent, divalent or trivalent elements. D may be selected from the group of trivalent or tetravalent elements. RE may be an activator element. 0?x?8, and ?(4+4y+3z)=3(8?x)+2x with the charge number y of element A, the charge number z of element D, and ?=0.9-1.1.

Abstract: A luminophore may have the general empirical formula X3A7Z3O11:E, where: X=Mg, Ca, Sr, Ba, and/or Zn; A=Li, Na, K, Rb, Cs, Cu, and/or Ag; Z=Al, Ga, and/or B; and E=Eu, Ce, Yb, and/or Mn.

Abstract: The disclosure provides a potassium aluminate phosphor which is doped with Mn+ or with Eu+ and Mn+, a lighting device, and methods for making the same. This disclosure also provides a conversion light emitting diode (LED) including a semiconductor layer sequence set up to emit electromagnetic primary radiation; and a conversion element including an Mn2+-doped potassium aluminate phosphor or an Eu2+- and Mn2+-doped potassium aluminate phosphor and at least partly converts the electromagnetic primary radiation to electromagnetic secondary radiation, wherein the Mn2+-doped potassium aluminate phosphor or the Eu2+- and Mn2+-doped potassium aluminate phosphor has a general empirical formula KxAl11+yO17+z:Mn2+, or KxAl11+yO17+z:(Mn2+,Eu2+).

Abstract: A luminophore may have the general empirical formula X3A7Z3O11:E, where: X=Mg, Ca, Sr, Ba, and/or Zn; A=Li, Na, K, Rb, Cs, Cu, and/or Ag; Z=Al, Ga, and/or B; and E=Eu, Ce, Yb, and/or Mn.

Abstract: A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.