Abstract: Method of plasma dicing a semiconductor wafer. The method includes a step of providing a semiconductor wafer comprising a main silicon layer and a top silicon oxide layer covered with an organic soft mask. The mask defines a plurality of scribe line regions to be etched. The method includes a step of plasma etching to remove the top silicon oxide layer in the scribe line regions to expose the main silicon layer. The plasma etching is performed using an etch chemistry having gaseous SF6 gas mixed with gaseous Ar. The method includes a step of plasma etching to remove the main silicon layer in the scribe line regions to provide a plurality of individual semiconductor die.

Abstract: A receiver authenticates a wideband (WB) signal from global navigation satellites (GNSS) using a narrowband (NB) signal that is also transmitted from the satellites. The NB signal includes segments that are transmitted in time and frequency slots of successive transmission frames. The NB signal is less susceptible to a smart WB jammer. Also, the NB signal segments may also be transmitted at a relative power level with respect to the WB signal, where the relative power level may vary in a known pattern so as to distinguish the WB signal of the satellite from a stronger WB signal from a smart jammer.

Abstract: A receiver authenticates a wideband (WB) signal from global navigation satellites (GNSS) using a narrowband (NB) signal that is also transmitted from the satellites. The NB signal includes segments that are transmitted in time and frequency slots of successive transmission frames. The NB signal is less susceptible to a smart WB jammer. Also, the NB signal segments may also be transmitted at a relative power level with respect to the WB signal, where the relative power level may vary in a known pattern so as to distinguish the WB signal of the satellite from a stronger WB signal from a smart jammer.

Abstract: A metallic feature on a substrate is subjected to a plasma dicing process and is cleaned. The workpiece has a carrier sheet attached to a frame member. The carrier sheet carries the substrate. The workpiece is provided on a workpiece support disposed within a chamber of an inductively coupled plasma apparatus. A sputter etch step is performed, including introducing a sputter gas or gas mixture into the chamber and sustaining an inductively coupled plasma of the sputter gas or gas mixture so as to sputter etch the substrate. A chemical etch step also is performed, including introducing O2 gas and/or O3 gas) into the chamber and sustaining an inductively coupled plasma of the O2 and/or O3 gas) so as to chemically etch the substrate. The sputter etch step and chemical etch step can be repeated.

Abstract: Disclosed are various embodiments to determine network transit time for a packet. A request packet for determining a network transit time is received. A reply packet is transmitted to the requester in response to the request packet. A reply packet is transmitted to the requester. The reply packet includes information about a packet processing time. This packet processing time includes a time between the receiving of the request packet and the transmitting of the reply packet.

Abstract: Disclosed are various embodiments to determine network transit time for a packet. A request packet for determining a network transit time is received. A reply packet is transmitted to the requester in response to the request packet. A reply packet is transmitted to the requester. The reply packet includes information about a packet processing time. This packet processing time includes a time between the receiving of the request packet and the transmitting of the reply packet.