Patents by Inventor Simon Eric Hicks

Simon Eric Hicks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated optical device
    Patent number: 7288794
    Abstract: An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: October 30, 2007
    Assignee: The University Court of the University of Glasgow
    Inventors: John Haig Marsh, Simon Eric Hicks, James Stewart Aitchison, Stewart Duncan McDougall, Bo Cang Qiu
  • Integrated optical device
    Publication number: 20030141511
    Abstract: An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a Ill-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.
    Type: Application
    Filed: December 9, 2002
    Publication date: July 31, 2003
    Inventors: John Haig Marsh, Simon Eric Hicks, James Stewart Aitchison, Stewart Duncan McDougall, Bo Cang Qiu
  • Thickness monitoring
    Patent number: 6226086
    Abstract: The thickness of a thin layer structure is monitored during deposition or etching. The structure is illuminated with a predetermined energy (visible or near visible light or x-ray) and a modified parameter of the illumination is measured, which may be reflection intensity, transmission intensity or polarisation. The detected signal is examined by shape recognition techniques using adaptive digital filters.
    Type: Grant
    Filed: April 19, 1999
    Date of Patent: May 1, 2001
    Assignee: Vorgem Limited
    Inventors: Mark Burton Holbrook, William George Beckmann, Simon Eric Hicks, Christopher David Wicks Wilkinson