Abstract: A transistor having high electron mobility (HEMT) having a first layer and a second layer is described. The first layer has a first material made of a first nitride compound. The first nitride compound has a group III element. The second layer has a second material made of a second nitride compound. The second nitride compound has a group III element. A main surface of the second layer is arranged opposite a main surface of the first layer, such that a charge zone forms along the main surface of the second layer. The HEMT further has a gate electrode, which is arranged opposite the second layer, at least in regions, such that the second layer is arranged between the first layer and the gate electrode. Furthermore, the HEMT has a third layer, which is arranged between the gate electrode and the second layer. The third layer has a ferroelectric third material made of a third nitride compound, or a ferroelectric third material made of an oxide compound which contains zinc.

Abstract: An electronic component comprises a first layer and a second layer, wherein a main surface of the first layer is arranged opposite a main surface of the second layer. The first layer comprises a polarized first material. A polarization of the first material faces in a first direction. The second layer comprises a polarized second material having at least one polarization state, wherein a direction of a polarization of the second material at least in the one polarization state of the second material is at least in part opposite to the first direction such that a charge zone forms along the main surface of the first and/or the second layer, said charge zone being electrically conductive at least when the second material is in the one polarization state.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Abstract: Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Abstract: Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Abstract: A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.