Patents by Inventor Simon Godddard

Simon Godddard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200386702
    Abstract: A gas sensor includes first and second electrodes (107, 109) and a first semiconductor layer (113) comprising a semiconducting transition halide or pseudohalide, for example copper thiocyanate, in electrical contact with the first and second electrodes. The semiconducting transition metal halide or pseudohalide provide that a semiconductor based gas sensor is sensitive to alkenes and can detect low concentrations of alkenes. Furthermore, the gas sensor may comprise a second semiconductor layer (111), different from the first semiconductor layer. The second semiconductor layer is preferably an organic semiconductor. The gas sensor may be a top-gate or bottom-gate thin film transistor (103: gate electrode; 105: gate dielectric) or a horizontal or vertical chemiresistor. The gas sensor may be used for detection of alkenes, for example ethylene or 1-MCP.
    Type: Application
    Filed: November 27, 2018
    Publication date: December 10, 2020
    Applicant: Sumitomo Chemical Company Limited
    Inventors: Simon Godddard, Nir Yaacobi-Gross