Patents by Inventor Simon GOUSSEAU

Simon GOUSSEAU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heat pipe and method of manufacturing the same
    Patent number: 10186474
    Abstract: A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: January 22, 2019
    Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Pascal Ancey, Simon Gousseau, Olga Kokshagina
  • Heat pipe and method of manufacturing the same
    Patent number: 9953895
    Abstract: A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: April 24, 2018
    Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Pascal Ancey, Simon Gousseau, Olga Kokshagina
  • HEAT PIPE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20180076114
    Abstract: A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.
    Type: Application
    Filed: November 17, 2017
    Publication date: March 15, 2018
    Inventors: Pascal Ancey, Simon Gousseau, Olga Kokshagina
  • Process for producing at least one through-silicon via with improved heat dissipation, and corresponding three-dimensional integrated structure
    Patent number: 9165861
    Abstract: A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: October 20, 2015
    Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Pierre Bar, Simon Gousseau, Yann Beilliard
  • HEAT PIPE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150262908
    Abstract: A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.
    Type: Application
    Filed: March 10, 2015
    Publication date: September 17, 2015
    Inventors: Pascal Ancey, Simon Gousseau, Olga Kokshagina
  • PROCESS FOR PRODUCING AT LEAST ONE THROUGH-SILICON VIA WITH IMPROVED HEAT DISSIPATION, AND CORRESPONDING THREE-DIMENSIONAL INTEGRATED STRUCTURE
    Publication number: 20140361440
    Abstract: A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.
    Type: Application
    Filed: May 27, 2014
    Publication date: December 11, 2014
    Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: PIERRE BAR, Simon GOUSSEAU, Yann BEILLIARD