Abstract: A measuring apparatus has at least two radiation sources arranged to illuminate a measuring region of a surface of a sample, the at least two sources configured to illuminate the measuring region along at least two illumination beam paths at different angles of incidence relative to a surface normal of the surface, a detector device configured to detect at least two scattered radiation images of surface sections in the illuminated measuring region at a predetermined viewing angle relative to the surface normal of the surface, portions of the scattered radiation received by the detector device, which portions are formed in each case by the illumination in one of the illumination beam paths, in each case having a common spatial frequency, and an evaluation device configured to determine at least one roughness feature of the surface sections from the at least two scattered radiation images.

Abstract: A measuring apparatus has at least two radiation sources arranged to illuminate a measuring region of a surface of a sample, the at least two sources configured to illuminate the measuring region along at least two illumination beam paths at different angles of incidence relative to a surface normal of the surface, a detector device configured to detect at least two scattered radiation images of surface sections in the illuminated measuring region at a predetermined viewing angle relative to the surface normal of the surface, portions of the scattered radiation received by the detector device, which portions are formed in each case by the illumination in one of the illumination beam paths, in each case having a common spatial frequency, and an evaluation device configured to determine at least one roughness feature of the surface sections from the at least two scattered radiation images.

Abstract: Holding apparatus 100 for electrostatic holding component 1 (e.g., semiconductor wafer), includes base body 10 with at least one plate 10A, protruding burls 11 on upper side of plate and end faces 12 of which span a burls support plane for supporting component, and electrode device 20 in layered form in spacings between burls and insulator layer 21 which is connected to plate, dielectric layer 23 of inorganic dielectric and electrode layer 22 between insulator and dielectric layers. Between burls support plane and dielectric layer upper side, predetermined gap spacing A is set. Electrode device has openings 24 and is on plate upper side between burls, which protrude therethrough. Insulator layer includes inorganic dielectric and is connected with adhesive 13 to base body upper side between burls. Electrode device is embedded in adhesive. Spacing between burls and electrode device is filled with adhesive. A production method is also described.

Abstract: Holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, includes plate-type base body 10 with plurality of projecting burls 11, the front surfaces 12 of which span a burl support plane for component 1, and electrode device 20 arranged in layered form in spacings between burls 11 and has plastic insulating layer 21 connected with base body 10, electrode layer 22 and dielectric layer 23, whereby electrode layer 22 is arranged between insulating layer 21 and dielectric layer 23, whereby a predetermined gap spacing A is set between the burl support plane and a top side of dielectric layer 23, and dielectric layer 23 includes an inorganic dielectric and is embedded at least in part into insulating layer 21. Methods for producing holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, are also described.

Abstract: Holding apparatus 100 for electrostatic holding component 1 (e.g., semiconductor wafer), includes base body 10 with at least one plate 10A, protruding burls 11 on upper side of plate and end faces 12 of which span a burls support plane for supporting component, and electrode device 20 in layered form in spacings between burls and insulator layer 21 which is connected to plate, dielectric layer 23 of inorganic dielectric and electrode layer 22 between insulator and dielectric layers. Between burls support plane and dielectric layer upper side, predetermined gap spacing A is set. Electrode device has openings 24 and is on plate upper side between burls, which protrude therethrough. Insulator layer includes inorganic dielectric and is connected with adhesive 13 to base body upper side between burls. Electrode device is embedded in adhesive. Spacing between burls and electrode device is filled with adhesive. A production method is also described.

Abstract: Holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, includes plate-type base body 10 with plurality of projecting burls 11, the front surfaces 12 of which span a burl support plane for component 1, and electrode device 20 arranged in layered form in spacings between burls 11 and has plastic insulating layer 21 connected with base body 10, electrode layer 22 and dielectric layer 23, whereby electrode layer 22 is arranged between insulating layer 21 and dielectric layer 23, whereby a predetermined gap spacing A is set between the burl support plane and a top side of dielectric layer 23, and dielectric layer 23 includes an inorganic dielectric and is embedded at least in part into insulating layer 21. Methods for producing holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, are also described.