Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

Abstract: Embodiments include systems, devices, and methods for monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, a processing tool includes a processing chamber having a liner wall around a chamber volume, and a monitoring device having a sensor exposed to the chamber volume through a hole in the liner wall. The sensor is capable of measuring, in real-time, material deposition and removal rates occurring within the chamber volume during the wafer fabrication process. The monitoring device can be moved relative to the hole in the liner wall to selectively expose either the sensor or a blank area to the chamber volume through the hole. Accordingly, the wafer fabrication process being performed in the chamber volume may be monitored by the sensor, and the sensor may be sealed off from the chamber volume during an in-situ chamber cleaning process. Other embodiments are also described and claimed.

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: The invention relates to a paper processing product and, in particular, to a shredder that crinkles paper stripes. The shredder has a shaft set driven by a motor. The shaft set includes at least two shafts rotating in opposite directions. Cutting blade sets are mounted on the shafts. Paper enters the entry of a paper passage formed by the shafts, and gets shredded into chips by the cutting blades. Since the exit of the paper passage is provided with a movable stopper, paper stripes are pushed by the rotating cutting blades to pass the stopper and become crinkled. The stopper is triggered to open by a certain force, letting the paper stripes fall. In addition to the functions of a usual shredder, the paper stripes thus made can be recycled.

Abstract: The invention relates to a paper processing product and, in particular, to a shredder that crinkles paper stripes. The shredder has a shaft set driven by a motor. The shaft set includes at least two shafts rotating in opposite directions. Cutting blade sets are mounted on the shafts. Paper enters the entry of a paper passage formed by the shafts, and gets shredded into chips by the cutting blades. Since the exit of the paper passage is provided with a movable stopper, paper stripes are pushed by the rotating cutting blades to pass the stopper and become crinkled. The stopper is triggered to open by a certain force, letting the paper stripes fall. In addition to the functions of a usual shredder, the paper stripes thus made can be recycled.

Abstract: A system for controlling the rotation speed of a shredder motor is disclosed. It consists of a bridge rectifier circuit, a forward/reverse controlling switch, a motor speed switch, and AC motor coils. By changing a switch, it is possible to activate the following four modes: forward fast, reverse fast, forward slow, and reverse slow. A user can thus operate a shredder at high torque and low rotation speed or high rotation speed and low torque depending on the number of sheets to be shredded.

Abstract: An expandable solid state drive is provided, comprising a main printed circuitboard, wherein the main printed circuitboard comprises a controller, an interface to a host, and connectors suitable to removably receive connectors mounted on a daughter card, the daughter card comprising at least one non-volatile flash memory chip, wherein when the daughter card is received by the main printed circuitboard, the form factor of the expandable solid state device is maintained.

Abstract: The present invention discloses a shredder which does not waste energy in standby mode. Power is applied to the components of the shredder only when material to be shredded is inserted into the shredder throat or when the unit is switched into reverse to clear a jam in the shredder.

Abstract: The present invention relates generally to shredder openings or throats. Specifically, this invention teaches a shredder housing with a top throat to allow material to be disposed of from above the shredder, as well as a side throat to allow for material to be disposed of from the side of the shredder. This is accomplished by placing a guiding member in the throat to assist both the top and side input. In addition, two side throats substantially opposite each other allow for multiple users to simultaneously use the shredder. Finally, the guiding member can serve as a handle to assist in lifting the housing from the base.

Abstract: A shredder holds a cutting blade assembly including a motor and a gear box inside its case and has a trash bin for collecting paper chips underneath the cutting blade assembly. A swinging board is provided in the vicinity of the paper outlet of the case. The swinging board is connected to a transmission axis via a shaft. One end of the transmission axis has a passive gear for receiving the rotating power from the cutting blade assembly via gears. As the transmission axis turns, the swinging board is driven by the shaft to perform a reciprocal motion so that the paper chips falling from the blades are evenly distributed over the trash bin. Paper chips accumulate in an even way to maximize the space in the trash bin. This prevents the formation of chip mountain and thus the problem of paper jams.

Abstract: The present invention relates generally to a shredder waste leveler and a shredder waste compactor. Specifically, this invention discloses a shredder waste leveler which levels shredder waste as it accumulates in the shredder base. In addition, this invention discloses a shredder waste compactor which compacts shredded material.

Abstract: The present invention relates generally to shredder waste management systems. Specifically, this invention discloses a shredder waste management system with a universal shredder waste bag that can be used in various sized shredders. In addition, this invention discloses various mechanisms for securing a shredder waste bag in a shredder.