Patents by Inventor Simon Jang

Simon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma treatment to improve barrier layer performance over porous low-K insulating dielectrics
    Patent number: 7176141
    Abstract: A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according to an overlying patterned resist layer; plasma treating according to a plasma process the etched opening to remove the resist layer and increase a surface density of the insulating dielectric layer within the etched opening; and, blanket depositing a barrier layer over the etched opening.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: February 13, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Simon Lin, Simon Jang, Douglas Yu